发光学报
髮光學報
발광학보
CHINESE JOURNAL OF LUMINESCENCE
2014年
11期
1342-1348
,共7页
安涛%李朋%李怀坤%丁志明%王海峰
安濤%李朋%李懷坤%丁誌明%王海峰
안도%리붕%리부곤%정지명%왕해봉
有机半导体%磷光材料%荧光材料%量子阱%白光有机发光器件
有機半導體%燐光材料%熒光材料%量子阱%白光有機髮光器件
유궤반도체%린광재료%형광재료%양자정%백광유궤발광기건
organic semiconductor%phosphorescent material%fluorescent material%quantum well%white organic light-emitting devices
以荧光材料BePP2结合量子阱作为蓝光发射层,磷光材料GIrl和R-4B掺入到混合双极性主体材料CBP∶Bphen中分别作为绿、红发光层并且在红绿发光层中引入间隔层TPBI,组合得到发白光的混合型有机发光器件。其中量子阱是以BePP2作为势阱、TCTA为势垒。结果表明:当势垒层数为2时,器件的最大发光亮度和电流效率分别为21682.5 cd/m2和23.73 cd/A;当电压从7 V增加到14 V时,色坐标从(0.345,0.350)变化到(0.340,0.342)。与无量子阱结构的参考器件相比,势垒层数为2的器件的最大功率效率为8.07 lm/W,色坐标变化相对最小为±(0.005,0.008),还有一个高的显色指数83。
以熒光材料BePP2結閤量子阱作為藍光髮射層,燐光材料GIrl和R-4B摻入到混閤雙極性主體材料CBP∶Bphen中分彆作為綠、紅髮光層併且在紅綠髮光層中引入間隔層TPBI,組閤得到髮白光的混閤型有機髮光器件。其中量子阱是以BePP2作為勢阱、TCTA為勢壘。結果錶明:噹勢壘層數為2時,器件的最大髮光亮度和電流效率分彆為21682.5 cd/m2和23.73 cd/A;噹電壓從7 V增加到14 V時,色坐標從(0.345,0.350)變化到(0.340,0.342)。與無量子阱結構的參攷器件相比,勢壘層數為2的器件的最大功率效率為8.07 lm/W,色坐標變化相對最小為±(0.005,0.008),還有一箇高的顯色指數83。
이형광재료BePP2결합양자정작위람광발사층,린광재료GIrl화R-4B참입도혼합쌍겁성주체재료CBP∶Bphen중분별작위록、홍발광층병차재홍록발광층중인입간격층TPBI,조합득도발백광적혼합형유궤발광기건。기중양자정시이BePP2작위세정、TCTA위세루。결과표명:당세루층수위2시,기건적최대발광량도화전류효솔분별위21682.5 cd/m2화23.73 cd/A;당전압종7 V증가도14 V시,색좌표종(0.345,0.350)변화도(0.340,0.342)。여무양자정결구적삼고기건상비,세루층수위2적기건적최대공솔효솔위8.07 lm/W,색좌표변화상대최소위±(0.005,0.008),환유일개고적현색지수83。
Hybrid white organic light-emitting device based on fluorescent layer combining with phosphorescent doping layer was fabricated, in which fluorescent material BePP2 acted as blue emit-ter layer, phosphorescent material GIrl and R-4B doped into CBP∶Bphen bipolar type host acted as green and red emitter layer, respectively. The ultrathin spacer layer was constructed by inserting a 2. 0 nm thin layer of TPBI between red and green emitting layer. In the quantum well structure, BePP2 and TCTA acted as the potential well layer and the potential barrier layer, respectively. The maximum luminance and current efficiency are 21 682. 5 cd/m2 and 23. 73 cd/A, respectively. The Commission Internationale de I ' Eclairage ( CIE ) coordinates of the device vary from ( 0 . 345 , 0. 350) at 7 V to (0. 340,0. 342) at 14 V when the number of potential barrier layer is two. In comparison with the reference device without quantum well structure,the device with two barrier lay-ers achieves a maximum power efficiency of 8. 07 lm/W, a low CIE coordinates changing of ± (0. 005, 0 . 008 ) , and a high color rendering index of 83 .