CAJ | 학술논문

设计了nBn结构的InAs/GaSb II类超晶格红外探测器，从理论和实验两方面对nBn器件的暗电流特性进行了研究，研究结果表明：理论计算的暗电流和实际测试结果趋势一致。另外，研制了p-i-n结构器件并与nBn器件进行了比较，测试结果显示：在77 K温度下，nBn器件的暗电流要比p-i-n器件暗电流小2个量级。温度升高到150 K时，nBn器件暗电流变大2个量级，而p-i-n器件暗电流变大4个量级；nBn器件峰值探测率下降到1/5，p-i-n器件峰值探测率下降2个量级。可见nBn器件适合高温工作，适合高性能红外焦平面探测器的研制。
설계료nBn결구적InAs/GaSb II류초정격홍외탐측기，종이론화실험량방면대nBn기건적암전류특성진행료연구，연구결과표명：이론계산적암전류화실제측시결과추세일치。령외，연제료p-i-n결구기건병여nBn기건진행료비교，측시결과현시：재77 K온도하，nBn기건적암전류요비p-i-n기건암전류소2개량급。온도승고도150 K시，nBn기건암전류변대2개량급，이p-i-n기건암전류변대4개량급；nBn기건봉치탐측솔하강도1/5，p-i-n기건봉치탐측솔하강2개량급。가견nBn기건괄합고온공작，괄합고성능홍외초평면탐측기적연제。
An infrared detector based on type-II InAs/GaSb strain layer superlattice with the nBn design has been designed. Dark current of the nBn device was studied through the theoretic calculation and the experiment. The results show that dark current of the theoretic calculation is consistent with the trend of the experimental results. In addition, the p-i-n device was developed, and compared with the nBn device. Test results present that dark current of the nBn device is two orders of magnitude lower than dark current of the p-i-n device at 77 K. When the temperature rises to 150 K, dark current of the nBn device increases by two orders of magnitude, and dark current of the p-i-n device increases by four orders of magnitude; the specific detectivity D* of the nBn device reduces to 1/5, and the D* of the p-i-n device decreases by over two orders of magnitude. Therefore nBn devices are suitable to work at high temperature, which will be fit to development of high performance infrared focal plane arrays.