化工学报
化工學報
화공학보
JOURNAL OF CHEMICAL INDUSY AND ENGINEERING (CHINA)
2014年
12期
4814-4822
,共9页
白云母%吸附%界面%分子模拟%浮选
白雲母%吸附%界麵%分子模擬%浮選
백운모%흡부%계면%분자모의%부선
muscovite%adsorption%interface%molecular dynamics simulation%flotation
作为一种重要的化工分离技术,浮选过程中的固/液界面现象极为重要。利用PCFF_phyllosilicates力场对不同数量的水分子在白云母表面的吸附情况进行了分子动力学研究,考察了原子密度分布、氢键相对浓度分布、径向分布函数、均方位移和表面 K+密度场等性质。结果表明:水分子达到单层覆盖后,靠近白云母(001)表面的前3层水分子的数目不随水分子的进一步增多发生改变;界面处的水分子比远离表面的水分子排列更为有序;原子密度分布、氢键相对浓度分布结果详细反映了白云母基质对水分子微观影响的“固体效应”。研究还表明,表面K+在水化条件下移动性差,尤其是z方向流动性最差,K+密度场图也证明[Si4Al2]?K+结构非常稳定。
作為一種重要的化工分離技術,浮選過程中的固/液界麵現象極為重要。利用PCFF_phyllosilicates力場對不同數量的水分子在白雲母錶麵的吸附情況進行瞭分子動力學研究,攷察瞭原子密度分佈、氫鍵相對濃度分佈、徑嚮分佈函數、均方位移和錶麵 K+密度場等性質。結果錶明:水分子達到單層覆蓋後,靠近白雲母(001)錶麵的前3層水分子的數目不隨水分子的進一步增多髮生改變;界麵處的水分子比遠離錶麵的水分子排列更為有序;原子密度分佈、氫鍵相對濃度分佈結果詳細反映瞭白雲母基質對水分子微觀影響的“固體效應”。研究還錶明,錶麵K+在水化條件下移動性差,尤其是z方嚮流動性最差,K+密度場圖也證明[Si4Al2]?K+結構非常穩定。
작위일충중요적화공분리기술,부선과정중적고/액계면현상겁위중요。이용PCFF_phyllosilicates력장대불동수량적수분자재백운모표면적흡부정황진행료분자동역학연구,고찰료원자밀도분포、경건상대농도분포、경향분포함수、균방위이화표면 K+밀도장등성질。결과표명:수분자체도단층복개후,고근백운모(001)표면적전3층수분자적수목불수수분자적진일보증다발생개변;계면처적수분자비원리표면적수분자배렬경위유서;원자밀도분포、경건상대농도분포결과상세반영료백운모기질대수분자미관영향적“고체효응”。연구환표명,표면K+재수화조건하이동성차,우기시z방향류동성최차,K+밀도장도야증명[Si4Al2]?K+결구비상은정。
As an important separation technique, microscopic phenomena of solid/liquid interface are crucial in flotation process. A molecular dynamics simulation is performed with PCFF_phyllosilicates force field to study the adsorption of water molecules on the muscovite surface, and atomic density profiles, hydrogen bond profiles, radical distribution function, mean squared displacement and density field are calculated. Results show that at a surface with water coverage larger than 1, the number of water molecules in the first three layers near the muscovite (001) surface will be stable with the increase of water molecules; water molecules closed to the surface represent much more ordering than those far from the surface; “solid effect” in the microscopic phenomena in the water solution is stressed by change trends of atomic density profiles and hydrogen bond profiles. It is found that K+ have poor mobility, especially in thez direction, and the stability of [Si4Al2]?K+ structure is provenvia the density field of K+.