电子元件与材料
電子元件與材料
전자원건여재료
ELECTRONIC COMPONENTS & MATERIALS
2014年
12期
10-13,16
,共5页
黄新友%邢仁克%郭淑婧%岳振星%陈志刚%房飞
黃新友%邢仁剋%郭淑婧%嶽振星%陳誌剛%房飛
황신우%형인극%곽숙청%악진성%진지강%방비
低温烧结%Nd2O3掺杂%钛酸锶钡%电容器陶瓷%稀土%介电性能
低溫燒結%Nd2O3摻雜%鈦痠鍶鋇%電容器陶瓷%稀土%介電性能
저온소결%Nd2O3참잡%태산송패%전용기도자%희토%개전성능
low temperature sintering%Nd2O3 doping%barium strontium titanate%capacitor ceramics%rare earths%dielectric property
采用固相法,研究了 Nd2O3掺杂量对 ZBS 玻璃添加的 Ba0.65Sr0.35TiO3(BST)基低温烧结的陶瓷的物相组成、显微结构及介电性能的影响。结果表明: Nd2O3的掺杂并没有改变低温烧结的BST基陶瓷的物相结构,仍为单一钙钛矿结构。随着Nd2O3掺杂量的增大,BST基陶瓷的介电常数先增大然后减小,介质损耗先减小然后增大。当Nd2O3添加质量分数为1.5%,烧结温度为975℃时, BST基陶瓷的综合性能较好,此时相对介电常数为667,介质损耗为0.01,在–30~+85℃容温变化率为–35.2%~14.8%。
採用固相法,研究瞭 Nd2O3摻雜量對 ZBS 玻璃添加的 Ba0.65Sr0.35TiO3(BST)基低溫燒結的陶瓷的物相組成、顯微結構及介電性能的影響。結果錶明: Nd2O3的摻雜併沒有改變低溫燒結的BST基陶瓷的物相結構,仍為單一鈣鈦礦結構。隨著Nd2O3摻雜量的增大,BST基陶瓷的介電常數先增大然後減小,介質損耗先減小然後增大。噹Nd2O3添加質量分數為1.5%,燒結溫度為975℃時, BST基陶瓷的綜閤性能較好,此時相對介電常數為667,介質損耗為0.01,在–30~+85℃容溫變化率為–35.2%~14.8%。
채용고상법,연구료 Nd2O3참잡량대 ZBS 파리첨가적 Ba0.65Sr0.35TiO3(BST)기저온소결적도자적물상조성、현미결구급개전성능적영향。결과표명: Nd2O3적참잡병몰유개변저온소결적BST기도자적물상결구,잉위단일개태광결구。수착Nd2O3참잡량적증대,BST기도자적개전상수선증대연후감소,개질손모선감소연후증대。당Nd2O3첨가질량분수위1.5%,소결온도위975℃시, BST기도자적종합성능교호,차시상대개전상수위667,개질손모위0.01,재–30~+85℃용온변화솔위–35.2%~14.8%。
The influence of Nd2O3 doping amount on material phase, microstructure and the dielectric properties of Ba0.65Sr0.35TiO3 (BST) series low temperature sintering ceramics doped with ZBS glass were investigated by the traditional solid state process. The results show that the main crystal phase of BST ceramics doped with Nd2O3 has a perovskite structure and has not the obviously secondary phase. When Nd2O3 doping amount increases, the dielectric constant of BST ceramics increases firstly and then decreases and the dielectric loss decreases firstly and then increases. The dielectric properties of BST ceramics doped with ZBS glass and with mass fraction of 1.5% of Nd2O3 and sintered at 975℃ are good:relative permittivity of 667, dielectric loss of 0.01,the change rate of capacitance is–35.2%-14.8%in the range of–30–+85℃.