功能材料
功能材料
공능재료
JOURNAL OF FUNCTIONAL MATERIALS
2014年
22期
22102-22105
,共4页
聂颖%任楚苏%周仕明%时钟%阎文盛%桑海
聶穎%任楚囌%週仕明%時鐘%閻文盛%桑海
섭영%임초소%주사명%시종%염문성%상해
垂直各向异性%交换偏置%净磁矩%多层膜
垂直各嚮異性%交換偏置%淨磁矩%多層膜
수직각향이성%교환편치%정자구%다층막
perpendicular magnetic anisotropy%exchange bias%net magnetic moments%multilayer
在室温下用超高真空磁控溅射系统制备了一系列的Pt(4.0 nm)/[Co(0.5 nm)/Pt(0.3 nm)]3-FeMn(tAF nm)多层膜样品,研究了反铁磁层厚度对于易轴垂直于样品表面的Co/Pt/FeMn多层膜磁性质的影响。在室温下利用样品的剩磁进行了 X 射线磁圆二色测量(XMCD),结果表明在铁磁/反铁磁界面有反铁磁层铁锰的净磁矩,这些净磁矩仅来自于铁元素。铁的磁矩倾向于垂直于膜面排列。磁测量结果表明,随着铁锰层厚度的增加,交换偏置场H EB 增加直到饱和,而HC 先增加,然后轻微减少,在tAF>7.5 nm 以后,H EB 和H C 都几乎不变了。没有观察到磁锻炼效应。
在室溫下用超高真空磁控濺射繫統製備瞭一繫列的Pt(4.0 nm)/[Co(0.5 nm)/Pt(0.3 nm)]3-FeMn(tAF nm)多層膜樣品,研究瞭反鐵磁層厚度對于易軸垂直于樣品錶麵的Co/Pt/FeMn多層膜磁性質的影響。在室溫下利用樣品的剩磁進行瞭 X 射線磁圓二色測量(XMCD),結果錶明在鐵磁/反鐵磁界麵有反鐵磁層鐵錳的淨磁矩,這些淨磁矩僅來自于鐵元素。鐵的磁矩傾嚮于垂直于膜麵排列。磁測量結果錶明,隨著鐵錳層厚度的增加,交換偏置場H EB 增加直到飽和,而HC 先增加,然後輕微減少,在tAF>7.5 nm 以後,H EB 和H C 都幾乎不變瞭。沒有觀察到磁鍛煉效應。
재실온하용초고진공자공천사계통제비료일계렬적Pt(4.0 nm)/[Co(0.5 nm)/Pt(0.3 nm)]3-FeMn(tAF nm)다층막양품,연구료반철자층후도대우역축수직우양품표면적Co/Pt/FeMn다층막자성질적영향。재실온하이용양품적잉자진행료 X 사선자원이색측량(XMCD),결과표명재철자/반철자계면유반철자층철맹적정자구,저사정자구부래자우철원소。철적자구경향우수직우막면배렬。자측량결과표명,수착철맹층후도적증가,교환편치장H EB 증가직도포화,이HC 선증가,연후경미감소,재tAF>7.5 nm 이후,H EB 화H C 도궤호불변료。몰유관찰도자단련효응。
A set of Pt(40 nm)/[Co(5 nm)/Pt(3 nm)]3/FeMn(tAF nm)multilayer samples deposited on the Si (100)wafer at room temperature was prepared using an ultrahigh vacuum magnetron sputtering system.We have studied the effect of the AF layer thickness tAF on the magnetic properties of Co/Pt/FeMn multilayer films with out-of-plane magnetic easy axis.X-ray magnetic circular dichroic (XMCD)measurement was performed by using the remnant magnetization of the samples at room temperature.The result shows that the net magnetic moment of the FeMn,which mainly originated from Fe,exists at the FM/AFM interface only,and the moment of Fe tends to be perpendicular to the sample plane.In the results of magnetic measurement,the exchange bias, H EB ,increases gradually and then flatly,meanwhile the coercivity,HC,increases first and then decreases slightly with increment of the FeMn layer thickness.Both HEB and HCare almost unchanged after tAF goes be-yond about 7.5 nm.The training effect has not been observed in the samples.