西南师范大学学报（自然科学版）
西南師範大學學報（自然科學版）
서남사범대학학보（자연과학판）
JOURNAL OF SOUTHWEST CHINA NORMAL UNIVERSITY
2014年
11期
56-61
,共6页
三势垒共振隧道结构%电子几率分布%电子势垒贯穿系数%电场
三勢壘共振隧道結構%電子幾率分佈%電子勢壘貫穿繫數%電場
삼세루공진수도결구%전자궤솔분포%전자세루관천계수%전장
three barrier resonant tunneling structure%electronic probability distribution%electronic barrier penetration coefficient%electric field
建立了三势垒共振隧道结构的物理模型，应用量子力学和固体理论，求出了电子的波函数和几率分布，以具有势阱材料 In0.53 Ga0.47 As 和势垒材料 In0.52 Al0.48 As 的纳米系统为例，探讨了电场对三势垒共振隧道结构电子几率分布和势垒贯穿系数的影响．结果表明：当能量较小时，电子的几率主要分布在第1势阱中，而当能量较大时，则主要分布在第2势阱，在势垒中电子几率很小；电子随能量的几率分布有波动性，在共振能附近的几率极大，共振能随着电场强度的增大而减小；电场的存在会使电子的最可几位置向入口势垒方向移动，而使电子贯穿势垒系数减小；电子势垒贯穿系数随能量增大而增大，当能量较小时，其数值及其随能量的变化都较小，当能量较大时情况则相反．
建立瞭三勢壘共振隧道結構的物理模型，應用量子力學和固體理論，求齣瞭電子的波函數和幾率分佈，以具有勢阱材料 In0.53 Ga0.47 As 和勢壘材料 In0.52 Al0.48 As 的納米繫統為例，探討瞭電場對三勢壘共振隧道結構電子幾率分佈和勢壘貫穿繫數的影響．結果錶明：噹能量較小時，電子的幾率主要分佈在第1勢阱中，而噹能量較大時，則主要分佈在第2勢阱，在勢壘中電子幾率很小；電子隨能量的幾率分佈有波動性，在共振能附近的幾率極大，共振能隨著電場彊度的增大而減小；電場的存在會使電子的最可幾位置嚮入口勢壘方嚮移動，而使電子貫穿勢壘繫數減小；電子勢壘貫穿繫數隨能量增大而增大，噹能量較小時，其數值及其隨能量的變化都較小，噹能量較大時情況則相反．
건립료삼세루공진수도결구적물리모형，응용양자역학화고체이론，구출료전자적파함수화궤솔분포，이구유세정재료 In0.53 Ga0.47 As 화세루재료 In0.52 Al0.48 As 적납미계통위례，탐토료전장대삼세루공진수도결구전자궤솔분포화세루관천계수적영향．결과표명：당능량교소시，전자적궤솔주요분포재제1세정중，이당능량교대시，칙주요분포재제2세정，재세루중전자궤솔흔소；전자수능량적궤솔분포유파동성，재공진능부근적궤솔겁대，공진능수착전장강도적증대이감소；전장적존재회사전자적최가궤위치향입구세루방향이동，이사전자관천세루계수감소；전자세루관천계수수능량증대이증대，당능량교소시，기수치급기수능량적변화도교소，당능량교대시정황칙상반．
The physical model of three barrier resonant tunneling structure has been established in this pa‐per .Applying solid state quantum mechanics ,the electron wave function and its probability distribution have been induced .Taking the nano - system with the potential well of and the barrier of material as exam‐ples ,the electric field's influence on the electronic probability distribution and electronic barrier penetration coefficient of three barrier resonant tunneling structure have been discussed .The results show that the e‐lectron probability is mainly distributed in the first potential well while the energy is smaller and that the electron probability is mainly distributed in the second well while the energy is bigger ,and so the probabil‐ity that electron is distributed in barrier is very small .The probability distribution of electrons varies with energy fluctuation ,and the probability is very greatly near the resonance energy band which decreases with the increase of electric field strength .The presence of the electric field would cause the electrons'the most probable position move to the direction of entrance barrier ,which would make the electronic barrier pene‐tration coefficient reduce .Electronic barrier penetration coefficient has increased with the increase of the energy ,and its value and variation with the energy is very small ,but it is vice versa while the energy is much bigger .
