CAJ | 학술논문

目的获得光电性能较佳的SnS/ZnO叠层太阳能电池。方法通过磁控溅射法,采用不同的溅射参数在FTO玻璃上制备SnS和ZnO薄膜,研究SnS和ZnO薄膜的晶体结构、表面形貌和光学性能,最终获得制备叠层太阳能电池的最佳方案。结果沉积SnS薄膜的溅射功率、沉积时间、工作气压为28 W,40 min,2.5 Pa和36 W,25 min,2.3 Pa时,获得的两种SnS薄膜均在(111)晶面具有良好的择优取向,晶粒较大,表面致密光滑,禁带宽度分别为1.48,1.83 eV。沉积ZnO薄膜的溅射功率、溅射时间、工作气压为100 W,10 min,2.5 Pa时,ZnO薄膜的结晶性能更优,透过率更大,适合作为太阳能电池的n层。以宽禁带SnS(1.83 eV)为外p型吸收层,窄禁带宽度SnS(1.48 eV)为内p型吸收层制备的FTO/n-ZnO/p-SnS(1.83 eV)/n-ZnO/p-SnS(1.48 eV)/Al叠层太阳能电池,其光电转化效率为0.108%,短路电流为0.90 mA,开路电压为0.40 V。结论制得的叠层太阳能电池性能较传统单层太阳能电池更优。
목적획득광전성능교가적SnS/ZnO첩층태양능전지。방법통과자공천사법,채용불동적천사삼수재FTO파리상제비SnS화ZnO박막,연구SnS화ZnO박막적정체결구、표면형모화광학성능,최종획득제비첩층태양능전지적최가방안。결과침적SnS박막적천사공솔、침적시간、공작기압위28 W,40 min,2.5 Pa화36 W,25 min,2.3 Pa시,획득적량충SnS박막균재(111)정면구유량호적택우취향,정립교대,표면치밀광활,금대관도분별위1.48,1.83 eV。침적ZnO박막적천사공솔、천사시간、공작기압위100 W,10 min,2.5 Pa시,ZnO박막적결정성능경우,투과솔경대,괄합작위태양능전지적n층。이관금대SnS(1.83 eV)위외p형흡수층,착금대관도SnS(1.48 eV)위내p형흡수층제비적FTO/n-ZnO/p-SnS(1.83 eV)/n-ZnO/p-SnS(1.48 eV)/Al첩층태양능전지,기광전전화효솔위0.108%,단로전류위0.90 mA,개로전압위0.40 V。결론제득적첩층태양능전지성능교전통단층태양능전지경우。
ABSTRACT:Objective To obtain SnS/ZnO tandem solar cell possessing better photoelectric performance. Methods SnS and ZnO thin films were deposited on FTO glass with the magnetron sputtering method. The crystal structure, surface topography and optical property of SnS and ZnO prepared with different puttering parameters were investigated, and then the best technique for preparing SnS/ZnO tandem solar cell was acquired. Results Under the conditions of sputtering power of 28 W, deposition time of 40 min, working pressure of 2. 5 Pa and sputtering power of 36 W, deposition time of 25 min, and working pressure of 2. 3 Pa, the SnS films all had good (111) preferred orientation, the grain size was big, the surface was smooth and dense, and the energy bad gaps were 1. 48 and 1. 83 eV, respectively. Under the conditions of sputtering power of 100 W, deposition time of 10 min and working pressure of 2. 5 Pa, ZnO was more suitable as the n layer of solar cell, because it had better crystallization properties and higher transmitance. Using large energy gap SnS(1. 83 eV) film as the external absorption p layer and low energy gap SnS (1. 48 eV) film as the internal absorption p layer, the FTO/n-ZnO/p-SnS(1. 83 eV)/n-ZnO/p-SnS(1. 48 eV)/Al tandem solar cell was pre-pared. The energy conversion efficiency of the tandem solar cell was 0. 108%, and the short circuit current and open circuit voltage were 0. 90 mA and 0. 40 V, respectively. Conclusion The photoelectric properties of the SnS/ZnO tandem solar cell were better than those of ordinary monolayer solar cell.