CAJ | 학술논문

采用数值分析方法进行模拟分析InGaN/GaN混合多量子阱中移去p-AlGaN电子阻挡层对GaN基双蓝光波长发光二极管（LED）性能的影响。结果发现，与传统的具有p-AlGaN电子阻挡层的双蓝光波长LED相比，移去电子阻挡层能有效地改善电子和空穴在混合多量子阱活性层中的分布均匀性，实现电子空穴在各个量子阱中的均衡辐射。在小电流驱动时，移去电子阻挡层器件的发光功率要明显优于具有电子阻挡层的器件；而在大电流驱动时，电子阻挡层能有效地减少电子溢流，改善器件的发光效率。
채용수치분석방법진행모의분석InGaN/GaN혼합다양자정중이거p-AlGaN전자조당층대GaN기쌍람광파장발광이겁관（LED）성능적영향。결과발현，여전통적구유p-AlGaN전자조당층적쌍람광파장LED상비，이거전자조당층능유효지개선전자화공혈재혼합다양자정활성층중적분포균균성，실현전자공혈재각개양자정중적균형복사。재소전류구동시，이거전자조당층기건적발광공솔요명현우우구유전자조당층적기건；이재대전류구동시，전자조당층능유효지감소전자일류，개선기건적발광효솔。
The effect of removing electron-blocking layer(EBL)on the physical properties of dual-blue wavelength light-emitting diode(LED)is investigated numerically. The results show that compared with the dual-blue LED with a p-type AlGaN EBL, it can improve the distribution of electrons and holes more uniformly in the multiple quantum wells(MQWs)and realize the radiation balance between dual-blue light by removing the p-type AlGaN EBL. The light output power of the LED without EBL is superior to that of the LED with EBL at the low injection current. However, the leakage current can be reduced by the EBL with the injection current increasing, so the efifciency droop will be improved.