电子与封装
電子與封裝
전자여봉장
EIECTRONICS AND PACKAGING
2014年
11期
9-12
,共4页
燕英强%吉勇%明雪飞%陈波%陈桂芳
燕英彊%吉勇%明雪飛%陳波%陳桂芳
연영강%길용%명설비%진파%진계방
深硅刻蚀%白光干涉%侧壁粗糙度%通孔形状%通孔深度%无损检测
深硅刻蝕%白光榦涉%側壁粗糙度%通孔形狀%通孔深度%無損檢測
심규각식%백광간섭%측벽조조도%통공형상%통공심도%무손검측
DRIE%white light interference%via sidewall roughness%via shape%via depth%nondestructive inspect
由于SEM显微镜、FIB显微镜检测高深宽比硅通孔耗时、费用高,研究了垂直扫描白光干涉技术检测硅通孔的可行性。设定刻蚀/钝化时间比率,改变深硅刻蚀功率和刻蚀时间,获得不同深度和侧壁粗糙度的硅通孔,并用垂直扫描白光干涉技术进行检测。研究结果表明垂直扫描白光干涉技术可以观察硅通孔的形状、测量侧壁粗糙度、精确无损测量硅通孔深度,可以替代SEM、FIB检测方法。
由于SEM顯微鏡、FIB顯微鏡檢測高深寬比硅通孔耗時、費用高,研究瞭垂直掃描白光榦涉技術檢測硅通孔的可行性。設定刻蝕/鈍化時間比率,改變深硅刻蝕功率和刻蝕時間,穫得不同深度和側壁粗糙度的硅通孔,併用垂直掃描白光榦涉技術進行檢測。研究結果錶明垂直掃描白光榦涉技術可以觀察硅通孔的形狀、測量側壁粗糙度、精確無損測量硅通孔深度,可以替代SEM、FIB檢測方法。
유우SEM현미경、FIB현미경검측고심관비규통공모시、비용고,연구료수직소묘백광간섭기술검측규통공적가행성。설정각식/둔화시간비솔,개변심규각식공솔화각식시간,획득불동심도화측벽조조도적규통공,병용수직소묘백광간섭기술진행검측。연구결과표명수직소묘백광간섭기술가이관찰규통공적형상、측량측벽조조도、정학무손측량규통공심도,가이체대SEM、FIB검측방법。
A feasibility is studied to inspect TSVs by vertical scan technology of white light interference because of consuming time and high fee to inspect high aspect ratio TSVs by SEM or FIB microscope. Different depth and sidewall roughness TSVs is fabricated by ifxing etch/passivation rate and changing etch power and etch time, and inspect them by vertical scan technology of white light interference. The research results indicate vertical scan technology of white light interference can replace SEM and FIB microscope for checking via shapes, measuring to via sidewall roughness and giving a precision and nondestructive measure to via depth.