CAJ | 학술논문

在光电探测器PTCDA/P-Si芯片的有机层表面,成功制作出了比接触电阻为4.5×10-5Ω·cm2的低阻欧姆接触层。利用X射线光电子能谱( XPS)对Al/Ni/ITO的欧姆接触层界面的电子状态进行了测试和分析。结果表明,ITO中的In3d及Sn3d各出现两个分裂能级的谱峰,它们是In和Sn原子处于氧化环境的结合能。 Ni2p有两个谱峰Ni2p(1)及Ni2p(2),低结合能位置Ni2p(1)对应于Ni原子被X射线激发产生的谱峰,说明Ni-ITO之间没有发生化学反应,Ni层阻止了Al层被氧化成Al2 O3；高结合能Ni2p(2)谱峰说明已形成了Al3 Ni冶金相,有利于低阻欧姆接触层的形成。
재광전탐측기PTCDA/P-Si심편적유궤층표면,성공제작출료비접촉전조위4.5×10-5Ω·cm2적저조구모접촉층。이용X사선광전자능보( XPS)대Al/Ni/ITO적구모접촉층계면적전자상태진행료측시화분석。결과표명,ITO중적In3d급Sn3d각출현량개분렬능급적보봉,타문시In화Sn원자처우양화배경적결합능。 Ni2p유량개보봉Ni2p(1)급Ni2p(2),저결합능위치Ni2p(1)대응우Ni원자피X사선격발산생적보봉,설명Ni-ITO지간몰유발생화학반응,Ni층조지료Al층피양화성Al2 O3；고결합능Ni2p(2)보봉설명이형성료Al3 Ni야금상,유리우저조구모접촉층적형성。
Low Ohmic contact layers with the specific contact resistance of 4. 5í10 -5Ω·cm2 were fabricated on the organic layer surface of PTCDA/P-Si photodetector chip. The electronic states of the interface of Al/Ni/ITO structure Ohmic contact layer were investigated using X-ray photoelectron spectroscopy ( XPS) . In ITO, In3d and Sn3d arise two peaks of split level, respectively. They are the binding energy of In and Sn atom located in oxidizing environment. Ni2p has two spectra peaks of Ni2p(1) and Ni2p(2) . The lower binding energy location is Ni2p(1) which is excited by X-ray. It indi-cates that no chemical reaction happens between Ni and ITO layer, and the formation of A12 O3 has been prevented. As for Ni2p(2) peak, it indicates that Al3 Ni alloy phase has formed,which is good for the formation of low resistance Ohmic contact layer.