CAJ | 학술논문

摘要：在室温下，分别利用常规磁控溅射和反应磁控溅射技术交替沉积Si薄膜和Si1-xNx薄膜在单晶硅基体上制备了Si／Si1-xNx纳米多层膜。接下来，在高温下对Si／Si1-xNx多层膜进行退火诱发各层中形成硅纳米晶。研究了Si1-xNx层厚度和N2流量沉积对si／Si1-xNx多层膜中Si量子点形成的影响。TEM检测结果表明，N2流量为2．5mL／min时沉积的多层膜退火后形成了尺寸为20-30nm的等轴Si3N4纳米晶；N2流量为5．0mL／min时沉积的多层膜退火后在Si层和Si1-xNx层中均形成了硅纳米晶，而在7．5mL／min N2流量下沉积的Si／Si1-xNx多层膜退火后仅在Si层中形成了硅纳米晶。
적요：재실온하，분별이용상규자공천사화반응자공천사기술교체침적Si박막화Si1-xNx박막재단정규기체상제비료Si／Si1-xNx납미다층막。접하래，재고온하대Si／Si1-xNx다층막진행퇴화유발각층중형성규납미정。연구료Si1-xNx층후도화N2류량침적대si／Si1-xNx다층막중Si양자점형성적영향。TEM검측결과표명，N2류량위2．5mL／min시침적적다층막퇴화후형성료척촌위20-30nm적등축Si3N4납미정；N2류량위5．0mL／min시침적적다층막퇴화후재Si층화Si1-xNx층중균형성료규납미정，이재7．5mL／min N2류량하침적적Si／Si1-xNx다층막퇴화후부재Si층중형성료규납미정。
Abstract： Si1-xNx multilayers were grown by alternating deposition of Si layer and Si1-xNx layer using magnetron sputtering and reactive magnetron sputtering under different N2 flows, and the post-deposition annealing of Si/Si1-xNx multilayers is performed. Transmission electron microscopy （TEM） was used to characterize the microstructure of muhilayers. The cross-sectional TEM reveales that the formation of Si3 N4 nanocrystallines for 2.5mL/min N2 flows and Si nanocrystallines are embedded in Si layers and Si1-xNx layers of muftilayers deposited under 5.0mL/min N2 flows and in Si layers of multilayers deposit at 7.5mL/min N2 flows.