CAJ | 학술논문

利用365nm波段光源、扫描电镜、台阶仪、原子力显微镜和椭偏仪,研究了亚波长分辨光刻介质X AR-N 7700/30型光刻胶的显影速度、对比度、薄膜厚度和折射率等化学、物理特性参数。光刻胶未曝光部分显影速度为23.15nm/s,曝光部分为1.85nm/s,光刻胶的对比度高达2.5,稀释至30%的质量浓度时,光刻胶可旋涂成45nm厚的薄膜。
이용365nm파단광원、소묘전경、태계의、원자력현미경화타편의,연구료아파장분변광각개질X AR-N 7700/30형광각효적현영속도、대비도、박막후도화절사솔등화학、물리특성삼수。광각효미폭광부분현영속도위23.15nm/s,폭광부분위1.85nm/s,광각효적대비도고체2.5,희석지30%적질량농도시,광각효가선도성45nm후적박막。
Using 365nm wave band light sources and SEM, step tester, AFM and ellipsometry, the chemical and physical characteristics, those are developing velocity, contrast, film thickness and refractive index, of photolithography medium X AR-N 7700/30 resist with sub-wavelength resolution are studied. The developing velocity of the unexposed part of the resist is 23.15nm/s, and that is 1.85nm/s for the exposed part. The contrast of the resist is as high as 2.5. The thickness of the spin coating resist film can reach to 45nm, when the resist is dilu- ted to weight concentration 30%.