CAJ | 학술논문

介电常数分别为2.6的聚甲基丙烯酸甲酯（PMMA）及介电常数为16的偏氟乙烯-三氟乙烯共聚物（P（VDF-TrFE））两种不同的有机绝缘材料,通过溶液旋涂的方法在P型硅衬底上制备了不同结构的复合栅介质膜并测试了它们的高频C-V特性及漏电特性。实验结果表明Si-PMMA-P（VDF-TrFE）-Ag结构绝缘膜上单位面积电容达到了35nF/cm2,40V电压下漏电流随着扫描次数的增加逐渐由7.29×10-7 A/cm2降低至3.44×10-7 A/cm2。而Si-P（VDF-TrFE）-PM-MA-Ag结构栅介质膜测得的单位面积电容仅为15nF/cm2,在相同电压下的单位面积漏电流为1.93×10-8 A/cm2。在此基础上分析了电子陷阱以及电场强度对双层栅绝缘膜C-V、I-V特性的影响。
개전상수분별위2.6적취갑기병희산갑지（PMMA）급개전상수위16적편불을희-삼불을희공취물（P（VDF-TrFE））량충불동적유궤절연재료,통과용액선도적방법재P형규츤저상제비료불동결구적복합책개질막병측시료타문적고빈C-V특성급루전특성。실험결과표명Si-PMMA-P（VDF-TrFE）-Ag결구절연막상단위면적전용체도료35nF/cm2,40V전압하루전류수착소묘차수적증가축점유7.29×10-7 A/cm2강저지3.44×10-7 A/cm2。이Si-P（VDF-TrFE）-PM-MA-Ag결구책개질막측득적단위면적전용부위15nF/cm2,재상동전압하적단위면적루전류위1.93×10-8 A/cm2。재차기출상분석료전자함정이급전장강도대쌍층책절연막C-V、I-V특성적영향。
Based on solution processing,use two kinds of materials which have different dielectric constant,2.6 for PMMA and 16 for P（VDF-TrFE）.Fabricate two different structures of double-layer insulating films on P type silicon substrates and test their high frequency C-V characteristic and leakage characteristics.For Si-PMMA-P（VDF-TrFE）-Ag structure,the capacitance per unit is 35nF/cm2 and leakage current under 40V decrease gradually from 7.29×10-7A/cm2 to 3.44×10-7A/cm2 with the number of scans increase.When comes to the Si-P（VDF-TrFE）-PMMA-Ag structure,the capacitance measured is only 15nF/cm2,and the leakage current is 1.93×10-8A/cm2 at the same voltage.Based on this we analysis the influence of electron traps and electric field strength for the C-V and I-V characteristics in double layer insulating films.