CAJ | 학술논문

分别以SiO2微粉和Si3N4为硅源，炭黑为碳源，氧化硼为催化剂，采用碳热还原法在1500℃氩气气氛下合成了SiC晶须。通过透射电镜和扫描电镜对所合成SiC晶须的形貌和晶体结构特征进行了分析。结果表明，采用两种硅源所合成的晶须均为B—SiC单晶，晶须的生长面为（111）面，生长方向为[111]方向。两种硅源所合成的晶须形貌特点存在较大差别，表明其合成SiC晶须的生长机理不同，VLS生长和螺旋位错的延伸生长可以分别用来解释以SiO2微粉为硅源和以Si3N4为硅源合成的晶须在形貌结构特征上的差别。
분별이SiO2미분화Si3N4위규원，탄흑위탄원，양화붕위최화제，채용탄열환원법재1500℃아기기분하합성료SiC정수。통과투사전경화소묘전경대소합성SiC정수적형모화정체결구특정진행료분석。결과표명，채용량충규원소합성적정수균위B—SiC단정，정수적생장면위（111）면，생장방향위[111]방향。량충규원소합성적정수형모특점존재교대차별，표명기합성SiC정수적생장궤리불동，VLS생장화라선위착적연신생장가이분별용래해석이SiO2미분위규원화이Si3N4위규원합성적정수재형모결구특정상적차별。
Using microsilica and Si3N4 as silicon sources, black carbon as carbon source, B2O3 as catalyst, SiC whiskers were synthesized under argon atmosphere at 1500℃ by carbothermal reduction method. Morphology and crystal structure of SiC whiskers were characterized by transmission electron microscope and scanning elec- tron microscope. The results show that the SiC whiskers synthesized lay using two kinds of silica sources are both/3-SIC single crystals, and the growth plane is （111） along the direction of [111]. The obvious differences in morphology indicate that there are different growth mechanisms of SiC whiskers synthesized by using differ- ent silica sources. VLS growth and screw dislocation growth are suitable to explain the differences in morpholo- gy of two kinds of SiC whiskers respectively.