CAJ | 학술논문

采用溶胶-凝胶技术,在Pt（111）/Ti/SiO2/Si衬底上制备了高（100）取向生长、表面平整且结构致密的（Pb,La）（Zr,Ti）O3反铁电厚膜,研究了温度场和电场对（Pb,La）（Zr,Ti）O3反铁电厚膜电学性能的影响。实验结果表明反铁电厚膜在温度场和电场作用下发生反铁电相、铁电相和顺电相的相互转变,随外加电场增加,反铁电-铁电相变温度逐渐减小,介电常数峰值由2410减小到662,相变电流密度值由2.21×10-7A/cm2增大到8.52×10-7 A/cm2;随外加温度场增加,反铁电-铁电相变电场强度逐渐减小,饱和极化强度由39μC/cm2减小到31μC/cm2,相变电流密度值由2.89×10-5 A/cm2减小到8.8×10-6 A/cm2,温度场和电场可实现对反铁电厚膜相变电流效应的有效调控。
채용용효-응효기술,재Pt（111）/Ti/SiO2/Si츤저상제비료고（100）취향생장、표면평정차결구치밀적（Pb,La）（Zr,Ti）O3반철전후막,연구료온도장화전장대（Pb,La）（Zr,Ti）O3반철전후막전학성능적영향。실험결과표명반철전후막재온도장화전장작용하발생반철전상、철전상화순전상적상호전변,수외가전장증가,반철전-철전상변온도축점감소,개전상수봉치유2410감소도662,상변전류밀도치유2.21×10-7A/cm2증대도8.52×10-7 A/cm2;수외가온도장증가,반철전-철전상변전장강도축점감소,포화겁화강도유39μC/cm2감소도31μC/cm2,상변전류밀도치유2.89×10-5 A/cm2감소도8.8×10-6 A/cm2,온도장화전장가실현대반철전후막상변전류효응적유효조공。
（Pb, La）（Zr, Ti） O3 antiferroelectric thick film which had high （100） orientation, smooth surface and dense structure was prepared on Pt（lll）/Ti/SiO2/Si substrate by sol-gel technology. The electrical properties of （Pb, La）（Zr, Ti）O3 antiferroelectric thick film under various temperature and DC electric fields were studied. The experimental results show that antiferroelectric thick film happened mutual phase transformation of antiferroelectric, ferroelectric and paraelectric depending on temperature and electric field. The phase transition tern perature of antiferroelectric - ferroelectric gradually decreases with the increase of applied electric field. The peak value of dielectric constant decreased from 2410 to 662. The phase transition current density increased from 2.21 × 10-7 to 8.52× 10 7A/cm2. The phase transition electric field of antiferroelectric-ferroelectric grad- ually decreases with the increase of applied temperature field. The relevant saturation polarization changed from 39 to 31/2C/cm^2. The phase transition current density decreased from 2.89 × 10-5 to 8.8 × 10 6 A/cm2. The phase transition current characterization can he effectively adjusted By coupling application of temperature field and DC electric field.