CAJ | 학술논문

利用高功率脉冲磁控放电等离子体注入与沉积技术制备了氧化钒薄膜,分别采用X射线衍射仪、原子力显微镜、扫描电子显微镜和电化学分析仪研究了不同高压幅值对氧化钒薄膜的相结构、表面形貌、截面形貌以及耐腐蚀性能的影响。结果表明制备的氧化钒薄膜以VO2（-211）相为主,还含有少量的VO2（111）、VO（220）、VO（222）相。不同高压下氧化钒薄膜表面致密、平整,其表面粗糙度仅为几个纳米,显示出良好的表面质量。氧化钒薄膜表现出典型致密的柱状晶生长形貌,且随着高压增加,氧化钒薄膜膜层厚度有所下降。氧化钒薄膜耐腐蚀性能较纯铝基体有较大提高,腐蚀电位提高0.093V,腐蚀电流下降1～2个数量级;当高压为-15kV时,氧化钒薄膜腐蚀电位最高,腐蚀电流最低,表现出最佳的耐蚀性能。
이용고공솔맥충자공방전등리자체주입여침적기술제비료양화범박막,분별채용X사선연사의、원자력현미경、소묘전자현미경화전화학분석의연구료불동고압폭치대양화범박막적상결구、표면형모、절면형모이급내부식성능적영향。결과표명제비적양화범박막이VO2（-211）상위주,환함유소량적VO2（111）、VO（220）、VO（222）상。불동고압하양화범박막표면치밀、평정,기표면조조도부위궤개납미,현시출량호적표면질량。양화범박막표현출전형치밀적주상정생장형모,차수착고압증가,양화범박막막층후도유소하강。양화범박막내부식성능교순려기체유교대제고,부식전위제고0.093V,부식전류하강1～2개수량급;당고압위-15kV시,양화범박막부식전위최고,부식전류최저,표현출최가적내식성능。
Vanadium oxide films were fabricated using high power pulsed magnetron discharge plasma ion implantation and deposition technique（HPPMS-PIID）,influence of amplitudes of high voltage on phase structure,surface morphology,cross-sectional morphology,and corrosion resistance of vanadium oxide films has been investigated by X-ray diffraction（XRD）,atomic force microscopy（AFM）,scanning electron microscopy（SEM）,and electrochemical tester respectively.XRD showed mainly VO2（111）,also contained a small amount of VO2（111）,VO（220）,VO（222） phase.Vanadium oxide films surface were relatively dense and smooth under different high voltages,whose surface roughness were only a few nanometers,which showed good surface quality;vanadium oxide films all represent typical of the density of the columnar crstal growth outlook,vanadium oxide films thickness declined with high voltages.Corrosion resistance of vanadium oxide films improved greatly than pure aluminum,vanadium oxide films corrosion potential was supreme and the corrosion potential increases by 0.093V,but the corrosion current decreases by an order of magnitude;corrosion current was minimum at-15kV,which showed the best corrosion resistance.