CAJ | 학술논문

利用射频等离子体增强型化学气相沉积（RF-PECVD）工艺,以SiH4和H2作为反应气体源,在石英衬底上制备了氢化纳米硅（nc-Si∶H）薄膜。其中衬底温度为250℃,H2稀释比为99%,反应压强为133Pa和射频功率为20～60W。采用α-台阶仪、X射线衍射仪（XRD）、Raman光谱仪、傅立叶变换红外光谱仪（FT-IR）和紫外-可见光分光光度计等对薄膜的结构特征和光学特性进行了测试研究。结果表明,随着射频功率的增大,nc-Si∶H薄膜的沉积速率增加,晶化率提高,晶粒尺寸增大和氢含量减小,同时薄膜的吸收系数增强,光学带隙变窄,结构有序性增强和带尾态宽度减小。
이용사빈등리자체증강형화학기상침적（RF-PECVD）공예,이SiH4화H2작위반응기체원,재석영츤저상제비료경화납미규（nc-Si∶H）박막。기중츤저온도위250℃,H2희석비위99%,반응압강위133Pa화사빈공솔위20～60W。채용α-태계의、X사선연사의（XRD）、Raman광보의、부립협변환홍외광보의（FT-IR）화자외-가견광분광광도계등대박막적결구특정화광학특성진행료측시연구。결과표명,수착사빈공솔적증대,nc-Si∶H박막적침적속솔증가,정화솔제고,정립척촌증대화경함량감소,동시박막적흡수계수증강,광학대극변착,결구유서성증강화대미태관도감소。
The hydrogenated nanocrystalline silicon (nc-Si · H) films were fabricated on quartz substrates by radio frequency plasma enhanced chemical vapor deposition (RF-PECVD) method with the substrate temperature of 250℃, H2 dilution ratio of 99%, the reaction pressure of 133Pa and RF power of 20-60W, using Sill4 and H2 as the gas source. The microstructures and optical properties of thin films were studied by alpha-step instru- ment, X-ray diffraction (XRD), Raman spectroscopy, Fourier transform infrared spectroscopy (FT-IR) and UV-Vis spectrophotometer. The results show that, with the increasing of RF power, the nc-Si : H deposition rate increased, the crystallization rate and grain size also increased, and the hydrogen content would decrease. Simultaneously, the absorption coefficient of the films was enhanced, the optical band gap became narrow, the structural order was enhanced and the width of the band tail would decrease.