CAJ | 학술논문

分别采用AFM和原子力/扫描探针显微镜（AFM/SPM）在纳米尺度下对碲基复合（Te/TeO2-SiO2）薄膜的表面电势、电容梯度等电学特性进行测量。测试结果表明控制电压为-0.8V,反应时间为200s条件下制备的碲基复合薄膜的表面电势差达到700mV,相对介电常数小于以硅为主要成分的衬底相对介电常数。利用光谱分析,碲基复合薄膜的禁带宽度约为3.14eV。
분별채용AFM화원자력/소묘탐침현미경（AFM/SPM）재납미척도하대제기복합（Te/TeO2-SiO2）박막적표면전세、전용제도등전학특성진행측량。측시결과표명공제전압위-0.8V,반응시간위200s조건하제비적제기복합박막적표면전세차체도700mV,상대개전상수소우이규위주요성분적츤저상대개전상수。이용광보분석,제기복합박막적금대관도약위3.14eV。
The surface potential and capacitance gradient were characterized by AFM/SPM in nano-scale.The results showed that the maximum contact potential difference was about 700mV,the relative dielectric constant of tellurium-based composite particles was smaller than the relative dielectric constant of substrate with silicon as the main component when control voltage is-0.8V in reaction time of 200s.The optical band gap was estimated to be 3.14eV by spectrum.