功能材料
功能材料
공능재료
JOURNAL OF FUNCTIONAL MATERIALS
2012年
23期
3201-3203,3207
,共4页
张永爱%曾祥耀%周雄图%郑灼勇%郭太良
張永愛%曾祥耀%週雄圖%鄭灼勇%郭太良
장영애%증상요%주웅도%정작용%곽태량
溶液缩聚法%聚酰亚胺绝缘膜%击穿场强
溶液縮聚法%聚酰亞胺絕緣膜%擊穿場彊
용액축취법%취선아알절연막%격천장강
solution polycondensation%polyimide dielectric films%breakdown field
以联苯四酸二酐(BPDA)和4,4’-二氨基二苯醚(ODA)为单体原料,利用溶液缩聚法制备聚酰亚胺(PI)绝缘膜,采用XRD、SEM、FT-IR对不同热亚胺化温度合成的PI薄膜结构和表面形貌进行了表征,利用超高阻微电流测试仪测试了热亚胺化温度和粉体含量对PI绝缘膜击穿场强的影响。结果表明,在真空度为1.0×10-2Pa条件下,300℃热亚胺化1h,聚酰亚胺酸(PAA)薄膜完全被热亚胺化,制备的PI绝缘膜内部结构致密;当BPDA和ODA的粉体含量为5%时,PI绝缘膜击穿场强高达2.15MV/cm,表明PI薄膜具有良好的电学性能。
以聯苯四痠二酐(BPDA)和4,4’-二氨基二苯醚(ODA)為單體原料,利用溶液縮聚法製備聚酰亞胺(PI)絕緣膜,採用XRD、SEM、FT-IR對不同熱亞胺化溫度閤成的PI薄膜結構和錶麵形貌進行瞭錶徵,利用超高阻微電流測試儀測試瞭熱亞胺化溫度和粉體含量對PI絕緣膜擊穿場彊的影響。結果錶明,在真空度為1.0×10-2Pa條件下,300℃熱亞胺化1h,聚酰亞胺痠(PAA)薄膜完全被熱亞胺化,製備的PI絕緣膜內部結構緻密;噹BPDA和ODA的粉體含量為5%時,PI絕緣膜擊穿場彊高達2.15MV/cm,錶明PI薄膜具有良好的電學性能。
이련분사산이항(BPDA)화4,4’-이안기이분미(ODA)위단체원료,이용용액축취법제비취선아알(PI)절연막,채용XRD、SEM、FT-IR대불동열아알화온도합성적PI박막결구화표면형모진행료표정,이용초고조미전류측시의측시료열아알화온도화분체함량대PI절연막격천장강적영향。결과표명,재진공도위1.0×10-2Pa조건하,300℃열아알화1h,취선아알산(PAA)박막완전피열아알화,제비적PI절연막내부결구치밀;당BPDA화ODA적분체함량위5%시,PI절연막격천장강고체2.15MV/cm,표명PI박막구유량호적전학성능。
Biphenyltetracarboxylic dianhydride(BPDA) and 4,4'-diaminodiphenyl ether(ODA) used as monomer reaction products and the polyimide(PI) dielectric films have been successfully fabricated via solution polycondensation.The structure and surface morphology of PI dielectric films prepared in different imidization temperature were characterized by XRD,SEM and FT-IR.The influence that the imidization temperature and powder content(BPDA and ODA) affected on the breakdown field was measured by current testing instrument with high resistance techniques.The experimental results show that polyimide acids(PAA) were completely aminated and become PI dielectric films with compact internal structure after imidization temperature of 300℃ for 1h under vacuum environment of 1.0×10-2Pa.The breakdown field can reach up to 2.15MV/cm when powder content of BPDA and ODA was fixed to 5%,which indicates that PI dielectric films have good electrical properties.