CAJ | 학술논문

随着微电子技术进一步发展,低k介质的引入使得铜的化学机械平坦化（CMP）须在低压下进行。提出了一种新型碱性铜抛光液,其不含常用的腐蚀抑制剂,并研究了其在低压下抛光及平坦化性能。静态条件下,铜的腐蚀速率较低仅为2nm/min。在低压10.34kPa时,铜的平均去除速率可达633.3nm/min,片内非均匀性（WIWNU）为2.44%。平坦化效率较高,8层铜布线平坦化结果表明,60s即可消去约794.6nm的高低差,且抛光后表面粗糙度低（0.178nm）,表面状态好,结果表明此抛光液可用于多层铜布线的平坦化。
수착미전자기술진일보발전,저k개질적인입사득동적화학궤계평탄화（CMP）수재저압하진행。제출료일충신형감성동포광액,기불함상용적부식억제제,병연구료기재저압하포광급평탄화성능。정태조건하,동적부식속솔교저부위2nm/min。재저압10.34kPa시,동적평균거제속솔가체633.3nm/min,편내비균균성（WIWNU）위2.44%。평탄화효솔교고,8층동포선평탄화결과표명,60s즉가소거약794.6nm적고저차,차포광후표면조조도저（0.178nm）,표면상태호,결과표명차포광액가용우다층동포선적평탄화。
Due to the incorporation of Cu/Low-k for copper interconnects fabrication,the Cu chemical mechanical planarization(CMP) is necessary to be performed at a reduced down pressure.In this paper,we have developed an inhibitor free alkaline copper slurry,the dissolution rate results indicate that the slurry has a low etch rate on copper(2nm/min),the polish results reveal that the copper removal rate can be achieved at 633.3nm/min under a low down pressure of 10.34kPa.The planarization efficiency results show that the slurry has a high planarization capability,it can eliminate about 794.6nm step height.Atomic force microscope(AFM) test show that the copper polished by this slurry has a lower roughness(0.178nm).All the results above show that the slurry can be applied in multi-layers copper CMP.