CAJ | 학술논문

分别采用直流反应溅射法和脉冲激光沉积法在硅衬底上沉积ZnO薄膜,用X射线衍射、扫描电镜、光致发光谱等手段对两种方法沉积的ZnO薄膜的结晶状态、表面形貌和光致发光等进行了表征.进一步对比研究了以上述两种方法制备的ZnO薄膜作为发光层的金属-绝缘体-半导体结构器件的电抽运紫外随机激射.结果表明,与以溅射法制备的ZnO薄膜作为发光层的器件相比,以脉冲激光沉积法制备的ZnO薄膜为发光层的器件具有更低的紫外光随机激射阈值电流和更高的输出光功率.这是由于脉冲激光沉积法制备的ZnO薄膜中的缺陷更少,从而显著地减少了紫外光在光散射过程中的光损耗.
분별채용직류반응천사법화맥충격광침적법재규츤저상침적ZnO박막,용X사선연사、소묘전경、광치발광보등수단대량충방법침적적ZnO박막적결정상태、표면형모화광치발광등진행료표정.진일보대비연구료이상술량충방법제비적ZnO박막작위발광층적금속-절연체-반도체결구기건적전추운자외수궤격사.결과표명,여이천사법제비적ZnO박막작위발광층적기건상비,이맥충격광침적법제비적ZnO박막위발광층적기건구유경저적자외광수궤격사역치전류화경고적수출광공솔.저시유우맥충격광침적법제비적ZnO박막중적결함경소,종이현저지감소료자외광재광산사과정중적광손모.
@@@@ZnO films on silicon substrates are prepared by reactive sputtering and pulsed laser deposition, respectively. Their crystallini-ties, surface morphologies and photoluminescence actions are characterized using X-ray diffraction, scanning electron microscopy and photoluminescence spectroscopy correspondingly. Furthermore, the electrically pumped random laser actions of the two metal-insulator-semiconductor structured devices based on the sputtered and pulse laser deposition ZnO films respectively are comparatively investigated. It is found that the device fabricated using the pulse laser deposition ZnO film possesses a much lower threshold current for random lasing and higher output optical power. This is due to the fact that the pulse laser deposition ZnO film has much fewer defects, leading to remarkably lower optical loss during the multiple scattering within such a ZnO film.