CAJ | 학술논문

采用射频等离子体辅助分子束外延技术生长得到了In组分精确可控且高质量的InxGa1?xN (x 0.2)外延薄膜.生长温度为580?C的In0.19Ga0.81N薄膜(10.2)面非对称衍射峰的半高宽只有587弧秒,背景电子浓度为3.96×1018/cm3.在富金属生长区域, Ga束流超过N的等效束流时, In组分不为零,即Ga并没有全部并入外延层;另外,稍微增加In束流会降低InGaN的晶体质量.
채용사빈등리자체보조분자속외연기술생장득도료In조분정학가공차고질량적InxGa1?xN (x 0.2)외연박막.생장온도위580?C적In0.19Ga0.81N박막(10.2)면비대칭연사봉적반고관지유587호초,배경전자농도위3.96×1018/cm3.재부금속생장구역, Ga속류초과N적등효속류시, In조분불위령,즉Ga병몰유전부병입외연층;령외,초미증가In속류회강저InGaN적정체질량.
@@@@Growth behaviors of InxGa1?xN (x 0.2) materials by plasma-assisted molecular beam epitaxy (PA-MBE) are investigated in detail. A precise control of the incorporation of indium into InxGa1?xN at a growth temperature of 580?C is realized. The In0.19Ga0.81N shows a very narrow width of 587 arcsec for the (10.2) asymmetrical reflection from high-resolution X-ray diffraction and the back-ground electronic concentration is 3.96×1018 cm3. In the region of metal-rich growth, no negligible indium incorporation is observed even if the Ga beam flux is much larger than the equivalent N flux. This growth behavior might be ascribed to an incomplete Ga incor-poration during InGaN growth. In addition, a slight increase of In flux results in crystalline quality degradation of InGaN epilayers.