物理学报
物理學報
물이학보
2013年
8期
087302-1-087302-5
,共1页
刘佰全%兰林锋%邹建华?%彭俊彪
劉佰全%蘭林鋒%鄒建華?%彭俊彪
류백전%란림봉%추건화?%팽준표
有机发光二极管%空穴注入层%功率效率%势垒
有機髮光二極管%空穴註入層%功率效率%勢壘
유궤발광이겁관%공혈주입층%공솔효솔%세루
organic light emitting diodes%hole injection layer%power efficiency%barrier
采用新型双空穴注入层N, N, N′, N′-tetrakis(4-Methoxy-phenyl)benzidine/Copper phthalocyanine(MeO-TPD/CuPc)及器件结构: ITO/MeO-TPD(15 nm)/CuPc(15 nm)/ N, N′-Bis(naphthalen-1-yl)-N, N′-bis(phenyl)benzidine (NPB,15 nm)/8-hydroxyquinoline (Alq3,50 nm)/LiF(1 nm)/Al(120 nm),研制出高效有机发光二极管(器件D),与其他器件(器件A,没有空穴注入层的器件;器件B, MeO-TPD单空穴注入层;器件C, CuPc单空穴注入层)相比,其性能得到明显改善.器件D的起亮电压降至3.2 V,比器件A, B, C的起亮电压分别降低了2,0.3,0.1 V.器件D在10 V时,其最大亮度为23893 cd/m2,最大功率效率为1.91 lm/W,与器件A, B, C的最大功率效率相比,分别提高了43%(1.34 lm/W),22%(1.57 lm/W),7%(1.79 lm/W).性能改善的主要原因是由于空穴注入和传输性能得到了改善,通过单空穴型器件的J-V 曲线对这一现象进行了分析.
採用新型雙空穴註入層N, N, N′, N′-tetrakis(4-Methoxy-phenyl)benzidine/Copper phthalocyanine(MeO-TPD/CuPc)及器件結構: ITO/MeO-TPD(15 nm)/CuPc(15 nm)/ N, N′-Bis(naphthalen-1-yl)-N, N′-bis(phenyl)benzidine (NPB,15 nm)/8-hydroxyquinoline (Alq3,50 nm)/LiF(1 nm)/Al(120 nm),研製齣高效有機髮光二極管(器件D),與其他器件(器件A,沒有空穴註入層的器件;器件B, MeO-TPD單空穴註入層;器件C, CuPc單空穴註入層)相比,其性能得到明顯改善.器件D的起亮電壓降至3.2 V,比器件A, B, C的起亮電壓分彆降低瞭2,0.3,0.1 V.器件D在10 V時,其最大亮度為23893 cd/m2,最大功率效率為1.91 lm/W,與器件A, B, C的最大功率效率相比,分彆提高瞭43%(1.34 lm/W),22%(1.57 lm/W),7%(1.79 lm/W).性能改善的主要原因是由于空穴註入和傳輸性能得到瞭改善,通過單空穴型器件的J-V 麯線對這一現象進行瞭分析.
채용신형쌍공혈주입층N, N, N′, N′-tetrakis(4-Methoxy-phenyl)benzidine/Copper phthalocyanine(MeO-TPD/CuPc)급기건결구: ITO/MeO-TPD(15 nm)/CuPc(15 nm)/ N, N′-Bis(naphthalen-1-yl)-N, N′-bis(phenyl)benzidine (NPB,15 nm)/8-hydroxyquinoline (Alq3,50 nm)/LiF(1 nm)/Al(120 nm),연제출고효유궤발광이겁관(기건D),여기타기건(기건A,몰유공혈주입층적기건;기건B, MeO-TPD단공혈주입층;기건C, CuPc단공혈주입층)상비,기성능득도명현개선.기건D적기량전압강지3.2 V,비기건A, B, C적기량전압분별강저료2,0.3,0.1 V.기건D재10 V시,기최대량도위23893 cd/m2,최대공솔효솔위1.91 lm/W,여기건A, B, C적최대공솔효솔상비,분별제고료43%(1.34 lm/W),22%(1.57 lm/W),7%(1.79 lm/W).성능개선적주요원인시유우공혈주입화전수성능득도료개선,통과단공혈형기건적J-V 곡선대저일현상진행료분석.
@@@@Highly efficient organic light-emitting diode is fabricated with a novel double hole injection layer consisting of MeO-TPD/CuPc. We observe that the insertion of such a double hole injection layer leads to a striking enhancement in the electrical property: higher luminance, power efficiency and lower driving voltage. It has the configuration of ITO/MeO-TPD (15 nm)/CuPc(15 nm)/NPB(15 nm)/Alq3 (50 nm)/LiF(1 nm)/Al(120 nm). Its turn-on voltage is 3.2 V, which is 2, 0.3 and 0.1 V lower than those of the device without hole injection layer (device A) and the devices using MeO-TPD (device B), CuPc (device C) as hole injection layer, respctively. The highest luminance of the novel device reaches 23893 cd/m2 at a drving voltage of 10 V. The maximum power efficiency of the novel decive is 1.91 lm/W, which is 43%(1.34 lm/W), 22%(1.57 lm/W) and 7%(1.79 lm/W) higher than those of devices A, B and C, respectively. The improvement is ascribed to its high hole injection and transport ability. The results are verified by using the J-V curves of“hole-only”devices.
