CAJ | 학술논문

基于高入射能量电子产生二次电子发射的物理过程,分别对高入射能量电子产生的真二次电子和背散射电子的概率进行理论分析与建模.利用Bethe能量损失模型和内二次电子逸出概率分布,推导出高入射能量电子产生有效真二次电子发射的系数与入射能量的关系式;根据高入射能量电子在材料内部被吸收的规律,推导出高入射能量电子产生背散射电子的系数与入射能量之间的关系式.结合两者得到高入射能量下金属的二次电子发射模型.利用该模型计算得到典型金属材料Au, Ag, Cu, Al的二次电子发射系数,理论计算结果与采用Casino软件模拟金属内部散射过程得到的数值模拟结果相符.
기우고입사능량전자산생이차전자발사적물리과정,분별대고입사능량전자산생적진이차전자화배산사전자적개솔진행이론분석여건모.이용Bethe능량손실모형화내이차전자일출개솔분포,추도출고입사능량전자산생유효진이차전자발사적계수여입사능량적관계식;근거고입사능량전자재재료내부피흡수적규률,추도출고입사능량전자산생배산사전자적계수여입사능량지간적관계식.결합량자득도고입사능량하금속적이차전자발사모형.이용해모형계산득도전형금속재료Au, Ag, Cu, Al적이차전자발사계수,이론계산결과여채용Casino연건모의금속내부산사과정득도적수치모의결과상부.
@@@@The models of the true secondary electron emission and backscattered electron emission for metal are provided, based on the physical process of secondary electron emission from metal at high incident electron energy. The formula for the true secondary electron yield at high incident electron energy is derived with the Bethe equation known to provide accurate and simple analytical expressions for the stopping power and the probability that a secondary electron produced in a material reaches the surface and is emitted into the vacuum. The formula for the backscattered electron yield at high incident electron energy is derived with the absorbing rule for the incident electron in the material. All the above results lead to a new model for secondary electron emission from metal at high incident electron energy. The secondary electron yields of Au, Ag, Cu and Al derived with the new model are in good agreement with the results obtained from the scatters process simulation code-Casino.