CAJ | 학술논문

采用C波段微波芯片套片,研制出的 C波段T/R组件,由功率放大支路、低噪声接收支路和相位控制支路构成.发射支路末级功率放大器采用GaAs赝配高电子迁移晶体管(PHEMT)功率芯片,实现C波段15W的功率输出,发射效率达到40%;采用基于低温共烧陶瓷(LTCC)的集成基板,提高集成度,缩小了组件体积.该组件工作频率为5.2~5.8GHz,饱和输出功率达到了10W,附加效率(PAE)为30%.
채용C파단미파심편투편,연제출적 C파단T/R조건,유공솔방대지로、저조성접수지로화상위공제지로구성.발사지로말급공솔방대기채용GaAs안배고전자천이정체관(PHEMT)공솔심편,실현C파단15W적공솔수출,발사효솔체도40%;채용기우저온공소도자(LTCC)적집성기판,제고집성도,축소료조건체적.해조건공작빈솔위5.2~5.8GHz,포화수출공솔체도료10W,부가효솔(PAE)위30%.
A C band T/R module has been demons trated, which applies GaAs chip. This chip consists of power amplifier branch, low noise receiving branch and phase control branch. The power amplifier in TR ansmitting branch adopts GaAs microwave power PHEMT devices respectively. Through hybrid integration, this chip can realize output power of 15W and TR ansmitting efficiency of 40%at C band. By means of integrating board based on low temperature co-fired ceramic (LTCC) technology, this chip can realize a much higher lever of integration and smaller volume. At the operating frequency from 5.2GHz to 5.8GHz, the saturated output power is 10W, and the power-added efficiency (PAE) is 30%.