CAJ | 학술논문

根据电相互作用原理,从微观角度分析了霍尔电势差,导体、绝缘体和半导体两端电势差产生的机理.认为在外电场的作用下价电子吸收外电场能量,并将其转化为晶格势场中的电势能,从而导致价电子在晶格势场中的电势降落(价电子远离原子核),因此,在霍尔元件上垂直于外电场方向上存在霍尔电势差,导体、绝缘体、半导体两端的电势差都是沿外电场方向所有价电子在晶格势场中的电势降落的总和.同时首次给出了空穴形成的物理图象:价电子由电负性弱的原子向电负性强的原子转移形成空穴.也首次给出了反映晶体各向异性的方法——测量非外电场方向绝缘体、半导体两点之间的电势差.
근거전상호작용원리,종미관각도분석료곽이전세차,도체、절연체화반도체량단전세차산생적궤리.인위재외전장적작용하개전자흡수외전장능량,병장기전화위정격세장중적전세능,종이도치개전자재정격세장중적전세강락(개전자원리원자핵),인차,재곽이원건상수직우외전장방향상존재곽이전세차,도체、절연체、반도체량단적전세차도시연외전장방향소유개전자재정격세장중적전세강락적총화.동시수차급출료공혈형성적물리도상:개전자유전부성약적원자향전부성강적원자전이형성공혈.야수차급출료반영정체각향이성적방법——측량비외전장방향절연체、반도체량점지간적전세차.
According to electrical interaction principle, mechanisms of Hall potential difference and difference of conductor, insulator and semiconductor from micro perspective are analyzed. It is thought that valence electron absorbs energy from external electric field and converts to positional energy of lattice potential field, thus the potential decreases in lattice potential field of electron (valence electron away from nucleus). So in Hall element exists Hall potential perpendicular to direction of external electric field. Potential of conductor, insulator and semiconductor are all sum of potential descendent of electron in lattice potential field. Physical image is provided at first time, valence electron transfers from weak to strong electro negative atom that causes hole formation. And method reflecting crystal anisotropy, measuring potential between two points of insulator, semiconductor of non external electric field direction, is given.