物理化学学报
物理化學學報
물이화학학보
ACTA PHYSICO-CHIMICA SINICA
2013年
5期
1021-1027
,共7页
闫伟平%王德军%陈礼平%卢永春%谢腾峰%林艳红*
閆偉平%王德軍%陳禮平%盧永春%謝騰峰%林豔紅*
염위평%왕덕군%진례평%로영춘%사등봉%림염홍*
In2O3敏化ZnO%纳米棒阵列%光电流密度-电位%光电流%挡光-照光%表面光电压%可见光光电催化活性
In2O3敏化ZnO%納米棒陣列%光電流密度-電位%光電流%擋光-照光%錶麵光電壓%可見光光電催化活性
In2O3민화ZnO%납미봉진렬%광전류밀도-전위%광전류%당광-조광%표면광전압%가견광광전최화활성
In2O3-sensitized ZnO%Nanorod array%Photocurrent density-potential%Photocurrent%On-off il umination%Surface photovoltage%Visible-light photoelectrocatalytic activity
以掺氟SnO2(FTO)导电玻璃为基底,采用水热法制备了ZnO纳米棒阵列.通过In(NO3)3水溶液水洗的方法,合成了In2O3敏化ZnO纳米棒阵列光催化剂.采用场发射扫描电子显微镜(FESEM), X射线能谱(EDX), X射线衍射(XRD)及紫外-可见漫反射光谱(UV-Vis DRS)对样品的形貌、结构、组成、晶相等进行一系列的表征.以罗丹明B (RhB)为目标降解物,探究了In2O3敏化ZnO纳米棒阵列光电催化活性.采用场诱导表面光伏技术(FISPV)研究了不同含量的In2O3敏化ZnO纳米棒阵列在光照射下的光生电荷行为.结合电化学工作站检测不同样品的光电流,随着In2O3敏化量的改变,光电流和开路电压也随之改变.并探讨了In2O3敏化ZnO纳米棒阵列光生电荷行为与光电催化活性之间的关系.结果表明,适量In2O3敏化的ZnO光催化剂在可见光下2 h内对罗丹明B的降解效率达到95%,是单纯ZnO纳米棒阵列的2.4倍.
以摻氟SnO2(FTO)導電玻璃為基底,採用水熱法製備瞭ZnO納米棒陣列.通過In(NO3)3水溶液水洗的方法,閤成瞭In2O3敏化ZnO納米棒陣列光催化劑.採用場髮射掃描電子顯微鏡(FESEM), X射線能譜(EDX), X射線衍射(XRD)及紫外-可見漫反射光譜(UV-Vis DRS)對樣品的形貌、結構、組成、晶相等進行一繫列的錶徵.以囉丹明B (RhB)為目標降解物,探究瞭In2O3敏化ZnO納米棒陣列光電催化活性.採用場誘導錶麵光伏技術(FISPV)研究瞭不同含量的In2O3敏化ZnO納米棒陣列在光照射下的光生電荷行為.結閤電化學工作站檢測不同樣品的光電流,隨著In2O3敏化量的改變,光電流和開路電壓也隨之改變.併探討瞭In2O3敏化ZnO納米棒陣列光生電荷行為與光電催化活性之間的關繫.結果錶明,適量In2O3敏化的ZnO光催化劑在可見光下2 h內對囉丹明B的降解效率達到95%,是單純ZnO納米棒陣列的2.4倍.
이참불SnO2(FTO)도전파리위기저,채용수열법제비료ZnO납미봉진렬.통과In(NO3)3수용액수세적방법,합성료In2O3민화ZnO납미봉진렬광최화제.채용장발사소묘전자현미경(FESEM), X사선능보(EDX), X사선연사(XRD)급자외-가견만반사광보(UV-Vis DRS)대양품적형모、결구、조성、정상등진행일계렬적표정.이라단명B (RhB)위목표강해물,탐구료In2O3민화ZnO납미봉진렬광전최화활성.채용장유도표면광복기술(FISPV)연구료불동함량적In2O3민화ZnO납미봉진렬재광조사하적광생전하행위.결합전화학공작참검측불동양품적광전류,수착In2O3민화량적개변,광전류화개로전압야수지개변.병탐토료In2O3민화ZnO납미봉진렬광생전하행위여광전최화활성지간적관계.결과표명,괄량In2O3민화적ZnO광최화제재가견광하2 h내대라단명B적강해효솔체도95%,시단순ZnO납미봉진렬적2.4배.
In2O3-sensitized ZnO nanorod array films were prepared in a two-step aqueous process on fluorine-doped tin oxide (FTO) substrates. Field emission scanning electron microscopy (FESEM), energy-dispersive X-ray spectroscopy (EDX), X-ray diffraction (XRD), field-induced surface photovoltage (FISPV), and UV-Vis diffuse reflectance spectroscopy (UV-Vis DRS) were used to characterize films. The influence of In2O3 content on the transfer characteristics of photoinduced charge carriers is discussed based on photovoltage response. The photoelectrocatalytic degradation efficiency of In2O3-sensitized ZnO nanorod array films was monitored using UV-Vis spectrometer. The photoelectrocatalytic activity of ZnO nanorod array and In2O3-sensitized ZnO nanorod array were evaluated from the degradation efficiency of rhodamine B (RhB). The effect of the In2O3-sensitized ZnO heterostructure on photoinduced electrons was investigated using the electrochemical workstation and the relationship between the photoinduced electron behavior and the photoelectrocatalytic process. Aqueous RhB was more efficiently degraded by the In2O3-sensitized ZnO nanorod array (visible light, applied bias voltage, 2 h), and the efficiency of the In2O3-sensitized array (95%) was 1.4 times higher than that of pure ZnO.
