物理学报
物理學報
물이학보
2013年
9期
84-90
,共7页
马国亮%李兴冀*%刘海%刘超铭%杨剑群%何世禹
馬國亮%李興冀*%劉海%劉超銘%楊劍群%何世禹
마국량%리흥기*%류해%류초명%양검군%하세우
高能电子%纳米金属%辐射损伤
高能電子%納米金屬%輻射損傷
고능전자%납미금속%복사손상
high energy electron%nano-material%radiation damage
采用脉冲电沉积方法制备出高致密、高质量的纳米晶Ni,并对其密度、组织成分和微观结构进行了表征.利用高能粒子加速器产生的1 MeV高能电子为辐照源,研究高能电子在纳米晶Ni和常规粗晶Ni中的能量损失.通过辐照过程中放置的吸收剂量片来准确表征其电子的能量沉积.结果表明,晶粒尺寸对高能电子在材料中的能量沉积有明显的影响,1 MeV电子在穿过一定厚度的金属Ni后,在晶粒尺寸细小的纳米晶Ni中测得总的吸收剂量较大,证明了高能电子在纳米材料中的总能量沉积较小,从而表现出纳米材料抗辐照的优异性能.
採用脈遲電沉積方法製備齣高緻密、高質量的納米晶Ni,併對其密度、組織成分和微觀結構進行瞭錶徵.利用高能粒子加速器產生的1 MeV高能電子為輻照源,研究高能電子在納米晶Ni和常規粗晶Ni中的能量損失.通過輻照過程中放置的吸收劑量片來準確錶徵其電子的能量沉積.結果錶明,晶粒呎吋對高能電子在材料中的能量沉積有明顯的影響,1 MeV電子在穿過一定厚度的金屬Ni後,在晶粒呎吋細小的納米晶Ni中測得總的吸收劑量較大,證明瞭高能電子在納米材料中的總能量沉積較小,從而錶現齣納米材料抗輻照的優異性能.
채용맥충전침적방법제비출고치밀、고질량적납미정Ni,병대기밀도、조직성분화미관결구진행료표정.이용고능입자가속기산생적1 MeV고능전자위복조원,연구고능전자재납미정Ni화상규조정Ni중적능량손실.통과복조과정중방치적흡수제량편래준학표정기전자적능량침적.결과표명,정립척촌대고능전자재재료중적능량침적유명현적영향,1 MeV전자재천과일정후도적금속Ni후,재정립척촌세소적납미정Ni중측득총적흡수제량교대,증명료고능전자재납미재료중적총능량침적교소,종이표현출납미재료항복조적우이성능.
The high performance nano-crystal Ni material was prepared by the pulse electrodeposition process;the intensity, composition and the microscopic structure of the nano-crystal Ni material were investigated by various measurements. In this paper, the 1 MeV electron was chosen as the irradiation source to investigate the energy loss of high energy electron in the nano-crystal Ni material and conventional bulk Ni material, and the energy deposition process during the electron irradiation was measured by the absorbed dose tablets. The results show that the grain size affects the energy loss process during the 1MeV electron irradiation seriously. The absorbed dose of 1 MeV electron in the nano-crystal Ni material is lower than that in the common Ni material with the same thickness, which indicates that the energy deposition of high energy electron in nano-crystal metal is lower than that in the conventional bulk metal, and the nano-crystal metal has an advantage of radiation resistance.