CAJ | 학술논문

本文采用低能电子辐照源对NPN及PNP晶体管进行辐照试验.在辐照试验过程中,针对NPN及PNP晶体管发射结施加不同的偏置条件,研究偏置条件对NPN及PNP晶体管辐射损伤的影响.使用Keithley 4200-SCS半导体特性测试仪在原位条件下测试了双极晶体管电性能参数随低能电子辐照注量的变化关系.测试结果表明,在相同的辐照注量条件下,发射结反向偏置时双极晶体管的辐照损伤程度最大;发射结正向偏置时双极晶体管的辐照损伤程度最小;发射结零偏时双极晶体管的辐照损伤程度居于上述情况之间.
본문채용저능전자복조원대NPN급PNP정체관진행복조시험.재복조시험과정중,침대NPN급PNP정체관발사결시가불동적편치조건,연구편치조건대NPN급PNP정체관복사손상적영향.사용Keithley 4200-SCS반도체특성측시의재원위조건하측시료쌍겁정체관전성능삼수수저능전자복조주량적변화관계.측시결과표명,재상동적복조주량조건하,발사결반향편치시쌍겁정체관적복조손상정도최대;발사결정향편치시쌍겁정체관적복조손상정도최소;발사결령편시쌍겁정체관적복조손상정도거우상술정황지간.
Bipolar junction transistors (BJTs), as important electronic components in analog or mixed-signal integrated circuits (ICs) and BiCMOS (Bipolar Complementary Metal Oxide Semiconductor) circuits, are employed in the space environment. Therefore, the research on characteristics and mechanisms of ionization damage in the BJTs is very important. Lower energy electrons are used as irradiation source to study the ionization damage in NPN and PNP transistors. Various bias conditions are imposed on the emitter-base junction to reveal the different bias conditions that contribute to the radiation effect on NPN and PNP transistors during irradiation processing. The semiconductor parameter analyzer, Keithley 4200-SCS, is used to measure the change of electrical parameters of transistors with increasing electron irradiation fluence in situ. Based on the measurement results, we find the degradation of transistors is severe under reverse emitter-base bias, and is lowest under forward emitter-base bias, while it is medium under zero emitter-base bias at a given irradiation fluence.