物理学报
物理學報
물이학보
2013年
10期
392-398
,共7页
易泰民*%邢丕峰%郑凤成%梅鲁生%杨蒙生%赵利平%李朝阳%谢军%杜凯%马坤全
易泰民*%邢丕峰%鄭鳳成%梅魯生%楊矇生%趙利平%李朝暘%謝軍%杜凱%馬坤全
역태민*%형비봉%정봉성%매로생%양몽생%조리평%리조양%사군%두개%마곤전
Al/DU界面%Au/DU界面%磁控溅射%界面扩散
Al/DU界麵%Au/DU界麵%磁控濺射%界麵擴散
Al/DU계면%Au/DU계면%자공천사%계면확산
Al/DU interface%Au/DU interface%magnetron sputtering%diffusion at interface
采用磁控溅射技术沉积制铝/贫铀/铝(Al/DU/Al)、金/贫铀/金(Au/DU/Au)“三明治”薄膜样品.利用高分辨扫描电镜、X射线衍射仪、X射线光电子能谱仪、扫描俄歇微探针对Al/DU/Al, Au/DU/Au样品的Al/DU, Au/DU界面行为进行表征与研究.结果表明:沉积态DU层以柱状晶生长;Al/DU界面扩散明显,物理扩散过程中伴随着Al, DU化学反应形成Al2U, Al3U金属化合物;金属化合物的形成导致界面处Al 2p电子结合能向高能端移动, U 4f电子向低能端移动;微量O在Al/DU界面处以Al2O3及铀氧化物形式存在;DU镀层中以铀氧化形式存在;沉积态的Au/DU界面扩散为简单的物理扩散,团簇效应导致Au/DU界面处Al 2p, U 4f电子结合能均向高能端移动;在Au/DU界面及DU镀层中,微量O以铀氧化物形式存在;Al/DU界面扩散强于Au/DU;相同厚度的Al, Au保护镀层, Al镀层保护效果优于Au镀层.
採用磁控濺射技術沉積製鋁/貧鈾/鋁(Al/DU/Al)、金/貧鈾/金(Au/DU/Au)“三明治”薄膜樣品.利用高分辨掃描電鏡、X射線衍射儀、X射線光電子能譜儀、掃描俄歇微探針對Al/DU/Al, Au/DU/Au樣品的Al/DU, Au/DU界麵行為進行錶徵與研究.結果錶明:沉積態DU層以柱狀晶生長;Al/DU界麵擴散明顯,物理擴散過程中伴隨著Al, DU化學反應形成Al2U, Al3U金屬化閤物;金屬化閤物的形成導緻界麵處Al 2p電子結閤能嚮高能耑移動, U 4f電子嚮低能耑移動;微量O在Al/DU界麵處以Al2O3及鈾氧化物形式存在;DU鍍層中以鈾氧化形式存在;沉積態的Au/DU界麵擴散為簡單的物理擴散,糰簇效應導緻Au/DU界麵處Al 2p, U 4f電子結閤能均嚮高能耑移動;在Au/DU界麵及DU鍍層中,微量O以鈾氧化物形式存在;Al/DU界麵擴散彊于Au/DU;相同厚度的Al, Au保護鍍層, Al鍍層保護效果優于Au鍍層.
채용자공천사기술침적제려/빈유/려(Al/DU/Al)、금/빈유/금(Au/DU/Au)“삼명치”박막양품.이용고분변소묘전경、X사선연사의、X사선광전자능보의、소묘아헐미탐침대Al/DU/Al, Au/DU/Au양품적Al/DU, Au/DU계면행위진행표정여연구.결과표명:침적태DU층이주상정생장;Al/DU계면확산명현,물리확산과정중반수착Al, DU화학반응형성Al2U, Al3U금속화합물;금속화합물적형성도치계면처Al 2p전자결합능향고능단이동, U 4f전자향저능단이동;미량O재Al/DU계면처이Al2O3급유양화물형식존재;DU도층중이유양화형식존재;침적태적Au/DU계면확산위간단적물리확산,단족효응도치Au/DU계면처Al 2p, U 4f전자결합능균향고능단이동;재Au/DU계면급DU도층중,미량O이유양화물형식존재;Al/DU계면확산강우Au/DU;상동후도적Al, Au보호도층, Al도층보호효과우우Au도층.
@@@@Aluminum/depleted uranium/aluminum (Al/DU/Al) and gold/depleted uranium/gold (Au/DU/Au)“sandwich structure”films are deposited by magnetron sputtering. Diffusions of Al/DU and Au/DU interface of these samples are investigated by high resolution scanning electronic microscope, X-ray diffraction, X-ray photoelectron spectrometer and scanning auger microprobe. The results show that deposited DU layer is of columnar grain. Significant diffusion takes place at Al/DU interface. Intermetallic compounds of Al2U and Al3U are formed at Al/DU interface by chemical reaction between Al and DU which induces chemical shift toward high binding energy of Al 2p and toward low binding energy of U 4f. Microdosages of O exist in Al over-layers as Al2O3, in Al/DU interface as Al2O3 and oxidation of uranium, and in DU layers as oxidation of uranium respectively. Just simple physical diffusion takes place at Au/DU interface. Binding energies of Au 4f and U 4f shift toward high-energy tail induced by cluster effect at the Au/DU interface. Microdosages of O exist at Au/DU interface and in DU layers as oxidation of uranium. Diffusion at the Al/DU interface is more obvious than at Au/DU surface. Under the condition of the same thickness valuses Al over-layer is more effective than Au over layer to protect uranium layer from oxidging.