CAJ | 학술논문

采用室温射频磁控溅射非晶铟镓锌氧化合物(a-IGZO),在相对低的温度(<200?C)下成功制备底栅a-IGZO薄膜晶体管器件,其场效应迁移率10 cm?2·V?1·s?1,开关比大于107,亚阈值摆幅SS为0.4 V/dec,阈值电压为3.6 V.栅电压正向和负向扫描未发现电滞现象.白光发光二极管光照对器件的输出特性基本没有影响,表明制备的器件可用于透明显示器件.研究了器件的光照稳定性,光照10000 s后器件阈值电压负向偏移约0.8 V,这种漂移是由于界面电荷束缚所致.
채용실온사빈자공천사비정인가자양화합물(a-IGZO),재상대저적온도(<200?C)하성공제비저책a-IGZO박막정체관기건,기장효응천이솔10 cm?2·V?1·s?1,개관비대우107,아역치파폭SS위0.4 V/dec,역치전압위3.6 V.책전압정향화부향소묘미발현전체현상.백광발광이겁관광조대기건적수출특성기본몰유영향,표명제비적기건가용우투명현시기건.연구료기건적광조은정성,광조10000 s후기건역치전압부향편이약0.8 V,저충표이시유우계면전하속박소치.
@@@@The amorphous indium-gallium-zinc-oxide (a-IGZO) thin films are prepared by radio frequency magnetron sputtering at ambient temperature. The transparent thin film transistors (TFT) fabricated at low temperature (<200 ?C) with a-IGZO active channel exhibits good electrical properties with a field effect mobility of around 10 cm2·V?1·s?1, subthreshold swing of 0.4 V/decade, and high Ionvoff current ratio of over 107. Hysteresis is not observed when gate voltage sweeps forward and reverses. And the dependence of white LED illumination on characteristic of a-IGZO TFT is investigated. The results show that output characteristic is hardly affected, indicating the potential of the devices for transparent electronics In particular, illumination stability is investigated under white LED illumination stress test, and the a-IGZO TFT shows only 04 V shift in threshold voltage. The negative shift can be explained on the basis of trap of interface state.