CAJ | 학술논문

随着高 Ga 组分Ⅲ族氮化物相关研究的日趋深入和生长技术的日益成熟,人们逐渐将研究重心转向具有更宽带隙的高 Al 组分Ⅲ族氮化物.该材料常温下带隙宽至6.2 eV,可覆盖短至210 nm 的深紫外波长范围,具有耐高温、抗辐射、波长易调控等独特优点,因而是制备紫外发光器件的理想材料.目前,高 Al 组分Ⅲ族氮化物材料质量不高,所制备的深紫外 LED 发光器件仍存在内量子效率、载流子注入效率和沿 c 轴方向正面出光效率较低的难题,因而制约了高效紫外发光器件的制备.本文着重介绍了近年来在高 Al 组分Ⅲ族氮化物生长动力学方面的研究进展,总结和梳理了量子结构设计、内电场调控以及晶体场调控等方面的相关研究,以期实现高质量深紫外 LED 的制备.
수착고 Ga 조분Ⅲ족담화물상관연구적일추심입화생장기술적일익성숙,인문축점장연구중심전향구유경관대극적고 Al 조분Ⅲ족담화물.해재료상온하대극관지6.2 eV,가복개단지210 nm 적심자외파장범위,구유내고온、항복사、파장역조공등독특우점,인이시제비자외발광기건적이상재료.목전,고 Al 조분Ⅲ족담화물재료질량불고,소제비적심자외 LED 발광기건잉존재내양자효솔、재류자주입효솔화연 c 축방향정면출광효솔교저적난제,인이제약료고효자외발광기건적제비.본문착중개소료근년래재고 Al 조분Ⅲ족담화물생장동역학방면적연구진전,총결화소리료양자결구설계、내전장조공이급정체장조공등방면적상관연구,이기실현고질량심자외 LED 적제비.
@@@@Along with the extensive investigations and growth technology maturation on high Ga content III-nitrides, researchers have moved their focus onto high Al content III-nitrides. Given a wider band gap up to 6.2 eV at room temperature, covering UV-light area as short as 210 nm, as well as other advantages of III-nitrides, high Al content III-nitrides are ideal materials for the fabrication of UV-light emitting devices. At present, there are certain challenges in the fabrication of UV-light emitting devices with high internal quantum e?ciency, carrier injection e?ciency and light-extraction e?ciency due to the low quality materials. In this work, the progress on growth kinetics of high Al content III-nitrides in recent years has been reviewed comprehensively, and the corresponding researches in quantum structure design, internal electric field modification and crystalline field modification have been overviewed and analyzed. This review is expected to be informative for the fabrication of deep UV-LEDs.