CAJ | 학술논문

采用高分子辅助的化学溶液沉积法,通过720~800℃之间进行烧结成相,分别在氩气和空气中SrTiO3(STO)单晶基底上沉积得到织构良好的SrZrO3(SZO)外延薄膜,重点研究不同热处理气氛对SZO薄膜织构和表面微结构的影响.结果表明:氩气中制得的SZO外延薄膜c轴取向较好,且表面更加平整致密;氩气中770℃制备的SZO薄膜厚度超过230 nm.而空气中制得的SZO薄膜表面呈现局部团聚和开裂.在氩气中采用高分子辅助的化学溶液沉积法有利于制备出低成本、高性能的涂层导体用单一SZO缓冲层.
채용고분자보조적화학용액침적법,통과720~800℃지간진행소결성상,분별재아기화공기중SrTiO3(STO)단정기저상침적득도직구량호적SrZrO3(SZO)외연박막,중점연구불동열처리기분대SZO박막직구화표면미결구적영향.결과표명:아기중제득적SZO외연박막c축취향교호,차표면경가평정치밀;아기중770℃제비적SZO박막후도초과230 nm.이공기중제득적SZO박막표면정현국부단취화개렬.재아기중채용고분자보조적화학용액침적법유리우제비출저성본、고성능적도층도체용단일SZO완충층.
@@@@The highly epitaxial SrZrO3 (SZO) buffer layer was deposited on SrTiO3 single crystal substrate both in Ar and in air by a polymer-assisted chemical solution deposition method at a temperature window of 720?800℃, which is a temperature range suitable for mass preparation of coated conductors. The effects of different atmosphere on the quality of final SZO were investigated. The results show that SZO buffer layers yielded in argon displays a smooth and crack-free surface and a good in-plan and out-plan orientation. Especially, the thickness is beyond 230 nm. However, the agglomeration and cracks begin to appear when the SZO buffer layers are fabricated in air. Using polymer-assisted chemical solution deposition method and fabricating in argon may be a effective measure to obtain the thick and high quality single SZO buffer layers.