中国有色金属学报
中國有色金屬學報
중국유색금속학보
THE CHINESE JOURNAL OF NONFERROUS METALS
2013年
4期
950-956
,共7页
铝合金%微弧氧化%硅酸钠%起弧过程%能量消耗
鋁閤金%微弧氧化%硅痠鈉%起弧過程%能量消耗
려합금%미호양화%규산납%기호과정%능량소모
aluminum alloys%micro-arc oxidation%sodium silicate%arcing process%energy consumption
利用脉冲微弧氧化电源研究1015铝合金于不同浓度硅酸钠水溶液中的起弧过程,借助扫描电子显微镜和电化学测试方法分析硅酸钠浓度对起弧瞬间膜层微观结构和表面阻值的影响,并根据电压变化曲线计算起弧过程的能量消耗.结果表明:当溶液中硅酸钠浓度为0时,即使极间电压升至1500 V,铝合金表面仍无微弧放电现象出现,并发生电解腐蚀;随着硅酸钠浓度由0.25 g/L 增加至10 g/L 时,铝合金表面发生微弧放电现象所需的电压由1217 V 降低至351 V,通电至起弧的等待时间由270 s 缩短至40 s,起弧瞬间膜层表面放电微孔数量增多;铝合金表面形成阻值达105数量级的高阻抗膜是发生微弧放电现象的前提,硅酸钠浓度的增大有利于形成高阻抗膜;铝合金微弧氧化起弧过程的能量消耗随着电解液中硅酸钠浓度的增大而减小,并在硅酸钠浓度为10 g/L 时达到最小值,仅为16 kJ/dm2.
利用脈遲微弧氧化電源研究1015鋁閤金于不同濃度硅痠鈉水溶液中的起弧過程,藉助掃描電子顯微鏡和電化學測試方法分析硅痠鈉濃度對起弧瞬間膜層微觀結構和錶麵阻值的影響,併根據電壓變化麯線計算起弧過程的能量消耗.結果錶明:噹溶液中硅痠鈉濃度為0時,即使極間電壓升至1500 V,鋁閤金錶麵仍無微弧放電現象齣現,併髮生電解腐蝕;隨著硅痠鈉濃度由0.25 g/L 增加至10 g/L 時,鋁閤金錶麵髮生微弧放電現象所需的電壓由1217 V 降低至351 V,通電至起弧的等待時間由270 s 縮短至40 s,起弧瞬間膜層錶麵放電微孔數量增多;鋁閤金錶麵形成阻值達105數量級的高阻抗膜是髮生微弧放電現象的前提,硅痠鈉濃度的增大有利于形成高阻抗膜;鋁閤金微弧氧化起弧過程的能量消耗隨著電解液中硅痠鈉濃度的增大而減小,併在硅痠鈉濃度為10 g/L 時達到最小值,僅為16 kJ/dm2.
이용맥충미호양화전원연구1015려합금우불동농도규산납수용액중적기호과정,차조소묘전자현미경화전화학측시방법분석규산납농도대기호순간막층미관결구화표면조치적영향,병근거전압변화곡선계산기호과정적능량소모.결과표명:당용액중규산납농도위0시,즉사겁간전압승지1500 V,려합금표면잉무미호방전현상출현,병발생전해부식;수착규산납농도유0.25 g/L 증가지10 g/L 시,려합금표면발생미호방전현상소수적전압유1217 V 강저지351 V,통전지기호적등대시간유270 s 축단지40 s,기호순간막층표면방전미공수량증다;려합금표면형성조치체105수량급적고조항막시발생미호방전현상적전제,규산납농도적증대유리우형성고조항막;려합금미호양화기호과정적능량소모수착전해액중규산납농도적증대이감소,병재규산납농도위10 g/L 시체도최소치,부위16 kJ/dm2.
@@@@The arcing process of micro-arc oxidation (MAO) on 1015 alloys aluminum (Al) using pulse power source in aqueous solutions with different Na2SiO3 concentrations was studied. The morphologies and surface resistance of initial films at arcing moment were analyzed and observed using scanning electron microscope (SEM) and electrochemical test, respectively. The effect of Na2SiO3 concentration on energy consumption of arcing process during MAO was calculated based on change curve of voltage. The results indicate that there is no arcing phenomenon but electrolytic etching on Al samples when the Na2SiO3 concentration is 0 and voltage is 1 500 V. With Na2SiO3 solution concentration increasing from 0.25 g/L to 10 g/L, arcing voltage dropping from 1 217 V to 351 V, arcing time reducing from 270 s to 40 s , the quantity of microspores on surface of initial films increases during arcing process of MAO. The high resistance film with resistance up to 105 order of magnitude formed on the surface of Al samples is the premise of arcing phenomenon emerging in MAO process, and higher Na2SiO3 solution concentration is beneficial to forming high resistance film. The energy consumption of arcing process is diminished with Na2SiO3 solution concentration increasing, and minimum value is 16 kJ/dm2 when Na2SiO3 concentration is 10 g/L.
