CAJ | 학술논문

采用真空蒸镀法分别在 K9和 Si(100)基片上制备 Be 薄膜,在相同沉积速率下,K9基片上 Be 薄膜生长形态和 Si 基片上 Be 薄膜生长形态存在差异.但是两者随沉积速率增加具有相似的演变规律,即由等轴晶变化至纤维晶,再至粗大等轴晶.XRD 和 XPS 分析结果表明:不同基片和蒸发温度下制备的 Be 薄膜均主要由 HCP 结构的α-Be 相组成,且表面存在一定氧化;对于非晶 K9基片,Be 薄膜晶粒取向较单一,(101)始终为显露晶面;而单晶 Si(100)基片上 Be 晶粒取向多样,在一定沉积速率下显露特定晶面;相同沉积时间下 K9和 Si(100)基体上生长的 Be 薄膜粗糙度 Rq 变化趋势十分相似,两者随 Be 薄膜沉积速率(v)增加先急剧增大后趋于平缓;以细小等轴晶生长的薄膜表面光洁度较高,而以纤维晶或粗大混晶生长的薄膜表面粗糙度较大.
채용진공증도법분별재 K9화 Si(100)기편상제비 Be 박막,재상동침적속솔하,K9기편상 Be 박막생장형태화 Si 기편상 Be 박막생장형태존재차이.단시량자수침적속솔증가구유상사적연변규률,즉유등축정변화지섬유정,재지조대등축정.XRD 화 XPS 분석결과표명:불동기편화증발온도하제비적 Be 박막균주요유 HCP 결구적α-Be 상조성,차표면존재일정양화;대우비정 K9기편,Be 박막정립취향교단일,(101)시종위현로정면;이단정 Si(100)기편상 Be 정립취향다양,재일정침적속솔하현로특정정면;상동침적시간하 K9화 Si(100)기체상생장적 Be 박막조조도 Rq 변화추세십분상사,량자수 Be 박막침적속솔(v)증가선급극증대후추우평완;이세소등축정생장적박막표면광길도교고,이이섬유정혹조대혼정생장적박막표면조조도교대.
@@@@Be films grown on K9 and Si(100) substrates were fabricated by an evaporation deposition method. At the same deposition velocity, the growth morphology of Be films grown on the K9 substrate is different from that grown on the Si(100) substrate. Whereas, both of them have the similar evolution rule with the increase of deposition velocity, which changes from an equiaxed grain to a fiber grain, and then to a coarsening equiaxed grain. XRD and XPS analyses indicate that the Be films grown on different substrates at different deposition velocities consist mainly of HCP structureα-Be phase, and all of the Be film surface is oxidized. For the amorphous K9 substrate, the preferential growth orientation of Be film is always exposed to (101) crystal face. While, the grain orientation of the Si substrate is diversiform, a special crystal face can be shown at a certain deposition velocity. For the Be films grown on K9 substrate and Si(100) substrate, their variation trend of roughness Rq is similar at the same deposition time. Both of them increase sharply with the increase of deposition velocity, and then enhance slightly. The Be films with an equiaxed grain is very smooth, while the surface roughness of the fiber grain and coarsening mixed grain is very large.