电工材料
電工材料
전공재료
ELECTRICAL ENGINEERING MATERIALS
2013年
1期
41-44
,共4页
氧化锡铟(ITO)%靶材密度%薄膜%射频磁控溅射
氧化錫銦(ITO)%靶材密度%薄膜%射頻磁控濺射
양화석인(ITO)%파재밀도%박막%사빈자공천사
indium tin oxide(ITO)%target density%film%radio frequency magnetron sputtering
以不同密度的氧化锡铟(ITO)靶材为原料,采用射频磁控溅射法,在室温下沉积并经750℃退火,获得了电阻率为1.56×10?4Ω·cm、可见光透过率为87%的ITO薄膜.对不同密度靶材制备的ITO薄膜的微观结构、电学及光学性能进行了表征与探讨.结果表明,采用射频磁控溅射法时,不同靶材密度对ITO薄膜的沉积速率、结构、电学和光学性能均无显著影响.该结果为采用低密度ITO靶材制备高品质ITO薄膜提供了一个新的思路.
以不同密度的氧化錫銦(ITO)靶材為原料,採用射頻磁控濺射法,在室溫下沉積併經750℃退火,穫得瞭電阻率為1.56×10?4Ω·cm、可見光透過率為87%的ITO薄膜.對不同密度靶材製備的ITO薄膜的微觀結構、電學及光學性能進行瞭錶徵與探討.結果錶明,採用射頻磁控濺射法時,不同靶材密度對ITO薄膜的沉積速率、結構、電學和光學性能均無顯著影響.該結果為採用低密度ITO靶材製備高品質ITO薄膜提供瞭一箇新的思路.
이불동밀도적양화석인(ITO)파재위원료,채용사빈자공천사법,재실온하침적병경750℃퇴화,획득료전조솔위1.56×10?4Ω·cm、가견광투과솔위87%적ITO박막.대불동밀도파재제비적ITO박막적미관결구、전학급광학성능진행료표정여탐토.결과표명,채용사빈자공천사법시,불동파재밀도대ITO박막적침적속솔、결구、전학화광학성능균무현저영향.해결과위채용저밀도ITO파재제비고품질ITO박막제공료일개신적사로.
In this paper, indium tin oxide(ITO) targets with different densities were used to deposit ITO films by radio frequency magnetron sputtering(RFMS). The films were deposited from these targets at room temperature and annealed at 750 ℃ . Microstructural, electrical and optical properties of the as-prepared films were studied. Results show that the target density has no effect on the properties or deposition rate of ITO films prepared by RFMS. Therefore, a new idea is provided for preparing high-quality ITO films with low-density ITO targets.
