CAJ | 학술논문

Sb2Te3基半导体合金是目前性能较好的热电半导体材料.将材料低维化处理可以获得较块状材料更大的热电优值.通过磁控溅射工艺制备低维Sb2Te3薄膜,并通过AFM、XRD和XPS测试方法对薄膜的成分、薄膜表面以及原子偏析进行表征.通过退火工艺去除薄膜应力,观察退火工艺前后薄膜表面形貌的变化以及退火温度对薄膜表面质量的影响.试验结果表明通过磁控溅射工艺所制备出的Sb2Te3薄膜为非晶态,随着溅射功率增大,薄膜的表面粗糙度增大.退火可使薄膜变为晶态,但是表面粗糙度增大.较大或较小溅射功率下所制备的薄膜其合金成分与合金靶材有较大偏差.
Sb2Te3기반도체합금시목전성능교호적열전반도체재료.장재료저유화처리가이획득교괴상재료경대적열전우치.통과자공천사공예제비저유Sb2Te3박막,병통과AFM、XRD화XPS측시방법대박막적성분、박막표면이급원자편석진행표정.통과퇴화공예거제박막응력,관찰퇴화공예전후박막표면형모적변화이급퇴화온도대박막표면질량적영향.시험결과표명통과자공천사공예소제비출적Sb2Te3박막위비정태,수착천사공솔증대,박막적표면조조도증대.퇴화가사박막변위정태,단시표면조조도증대.교대혹교소천사공솔하소제비적박막기합금성분여합금파재유교대편차.
Sb2Te3 based semiconductor alloy is the best semiconductor TE materials at present. As low dimensional materials having higher ZT than bulk materials, the magnetic sputtering technology was used to fabricate Sb2Te3 film to improve its thermoelectric figure of merit. The obtained Sb2Te3 film was characterized by AFM, XRD and XPS to analysis the surface morphology and the composition. Annealing process was used to eliminate the residual stress in the film and the influence from annealing temperature on film surface conditions was also investigated. The results showed that the film made by sputtering process was at amorphous state. High power might lead to crystalline film but worse surface roughness. Annealing process can transfer the amorphous film to be the crystalline film but also increase the surface roughness. Low or relative high power will bring the film with different compositions from that in target material.