CAJ | 학술논문

本文根据 SOI(Silicon-on-insulator)材料在太赫兹波段不透过太赫兹的特点,提出一种加工基于微机电系统(MEMS)可调谐太赫兹器件的新方案,并设计出与梳齿驱动加工工艺十分兼容的金属结构.此结构由金属网格和金属谐振环阵列复合构成,静态的测试表明结构在太赫兹波段显出带通滤波的特性,通过改变两个元件之间的位置,能够实现0.41～0.53 THz带通调谐.此结构加工方法简单,加工过程中只需要一块掩膜版,并且金属结构在MEMS梳齿结构释放之前就已经光刻形成,不需要两个图形的对准工艺,同时也避免了后续光刻对加工好MEMS梳齿结构的破坏.金属网格和金属谐振环构成的复合结构为微机电系统(MEMS)可调谐太赫兹器件提供了一种简单经济的加工方案和新的结构,具有较大的理论价值和实际意义.
본문근거 SOI(Silicon-on-insulator)재료재태혁자파단불투과태혁자적특점,제출일충가공기우미궤전계통(MEMS)가조해태혁자기건적신방안,병설계출여소치구동가공공예십분겸용적금속결구.차결구유금속망격화금속해진배진렬복합구성,정태적측시표명결구재태혁자파단현출대통려파적특성,통과개변량개원건지간적위치,능구실현0.41～0.53 THz대통조해.차결구가공방법간단,가공과정중지수요일괴엄막판,병차금속결구재MEMS소치결구석방지전취이경광각형성,불수요량개도형적대준공예,동시야피면료후속광각대가공호MEMS소치결구적파배.금속망격화금속해진배구성적복합결구위미궤전계통(MEMS)가조해태혁자기건제공료일충간단경제적가공방안화신적결구,구유교대적이론개치화실제의의.
We propose a novel metamaterial structure process according to the transmission property of the Silicon-on-insulator (SOI) wafer. We also suggest an appropriate structure for the Micro-electro-mechanical System (MEMS) technique to achieve larger frequency modulation. This structure was assembled by a Split Ring Resonator (SRR) with a metal mesh within a unit cell. Our experimental studies on the composite structure indicate that the coupling of the metal mesh and the SRR significantly contribute to transparency at the terahertz range. Moreover, we experimentally demonstrated the performance of this structure by changing the relative positions of the SRR and the metal mesh. The unique resonance characteristics of this composite structure make it an excellent candidate for developing tunable terahertz components via integration with the MEMS technology