河南科学
河南科學
하남과학
HENAN SCIENCE
2012年
12期
1710-1715
,共6页
传递矩阵%超晶格结构%势垒%势阱
傳遞矩陣%超晶格結構%勢壘%勢阱
전체구진%초정격결구%세루%세정
transfer matrix%superlattice structure%potential barrier%potential well
利用有效质量近似、传递矩阵方法结合边界条件计算了多势垒结构中电子的一维定态薛定谔方程,数值计算了电子穿过矩形势垒的透射概率与电子纵向能量的关系,并以Ga1-xAlxAs/GaAs超晶格结构为例,对多势垒中电子输运的几个基本现象作了说明.分析了势垒的数目和宽度对El-lnT曲线的影响,共振隧穿的产生原因以及势垒数与共振劈裂尖峰数的关系等.
利用有效質量近似、傳遞矩陣方法結閤邊界條件計算瞭多勢壘結構中電子的一維定態薛定諤方程,數值計算瞭電子穿過矩形勢壘的透射概率與電子縱嚮能量的關繫,併以Ga1-xAlxAs/GaAs超晶格結構為例,對多勢壘中電子輸運的幾箇基本現象作瞭說明.分析瞭勢壘的數目和寬度對El-lnT麯線的影響,共振隧穿的產生原因以及勢壘數與共振劈裂尖峰數的關繫等.
이용유효질량근사、전체구진방법결합변계조건계산료다세루결구중전자적일유정태설정악방정,수치계산료전자천과구형세루적투사개솔여전자종향능량적관계,병이Ga1-xAlxAs/GaAs초정격결구위례,대다세루중전자수운적궤개기본현상작료설명.분석료세루적수목화관도대El-lnT곡선적영향,공진수천적산생원인이급세루수여공진벽렬첨봉수적관계등.
In this paper,using the effective mass approximation and the transfer matrix method,Schrodinger equation in multi-barrier structure with boundary conditions electron one-dimensional is calculated,and the relationship between probability of electron transmitting through a rectangular barriers and electron longitudinal energy is computed numerically. Taking Ga1-x Alx As/GaAs superlattice structure for example,the multi-barrier electron transport several basic phenomenas are explained. The effect of the number and width of potential barriers on the El-lnT curve is analyzed. The reason of resonant tunneling and the relationship between the number of potential barriers and peak number of resonance spikes are studied.
