CAJ | 학술논문

采用离子束溅射沉积技术,在熔融石英基底上制备了SiO2薄膜,研究了热处理对离子束溅射SiO2薄膜结构特性的影响.热处理温度对表面粗糙度影响较大,低温热处理可降低表面粗糙度,高温热处理则增大表面粗糙度,选择合适的热处理温度,可以使表面粗糙度几乎不变.采用X射线衍射仪(XRD)物相分析方法,分析了热处理对离子束溅射SiO2薄膜的无定形结构特性的影响,当退火温度为550益,离子束溅射SiO2薄膜的短程有序范围最大、最近邻原子平均距离最小,与熔融石英基底很接近,结构稳定.实验结果表明,采用合适的热处理温度,能大大改善离子束溅射SiO2薄膜的结构特性.
채용리자속천사침적기술,재용융석영기저상제비료SiO2박막,연구료열처리대리자속천사SiO2박막결구특성적영향.열처리온도대표면조조도영향교대,저온열처리가강저표면조조도,고온열처리칙증대표면조조도,선택합괄적열처리온도,가이사표면조조도궤호불변.채용X사선연사의(XRD)물상분석방법,분석료열처리대리자속천사SiO2박막적무정형결구특성적영향,당퇴화온도위550익,리자속천사SiO2박막적단정유서범위최대、최근린원자평균거리최소,여용융석영기저흔접근,결구은정.실험결과표명,채용합괄적열처리온도,능대대개선리자속천사SiO2박막적결구특성.
SiO2 films were deposited on fused silica substrates by ion beam sputtering (IBS) technology, and the effects of thermal treatment on structural characteristic were researched. The effects of annealing temperature on surface roughness of IBS-SiO2 films were very large, low annealing temperature could reduce the surface roughness, but high annealing temperature could increase the surface roughness, the proper annealing temperature had almost no impact on surface roughness. Amorphous structures of IBS-SiO2 films were researched by XRD technology. When the annealing temperature was 550℃, the largest short range order and the shortest average distance were obtained, the results were the same as the fused silica substrate, and the structure was stable. Expermental results show that structural characteristic of IBS-SiO2 films can be improved by the proper thermal treatment.