CAJ | 학술논문

分别采用Cl2/Ar和SiCl4/Ar作为刻蚀气体对InAs/GaSb二类超晶格红外探测材料进行ICP (Inductively Couple Plasma)刻蚀.结果表明,两种刻蚀气体的刻蚀深度与刻蚀时间都呈线性关系;在2 mTorr气压下,RF功率为50 W,SiCl4流量为3 sccm,Ar 为9 sccm 时,刻蚀速率为100 nm/min,且与材料的掺杂浓度无关.实验还表明,SiCl4/Ar 作为刻蚀气体时,Ar流量在很大范围内对刻蚀速率没用明显影响,但 Ar 的流量越大,刻蚀的均匀性越好;用 Cl2/Ar 作为刻蚀气体时,刻蚀速率也是100 nm/min,但 Ar 流量对刻蚀速率有影响:当 Ar 流量小于3 sccm 时,刻蚀速率随 Ar 流量的减小而明显降低.
분별채용Cl2/Ar화SiCl4/Ar작위각식기체대InAs/GaSb이류초정격홍외탐측재료진행ICP (Inductively Couple Plasma)각식.결과표명,량충각식기체적각식심도여각식시간도정선성관계;재2 mTorr기압하,RF공솔위50 W,SiCl4류량위3 sccm,Ar 위9 sccm 시,각식속솔위100 nm/min,차여재료적참잡농도무관.실험환표명,SiCl4/Ar 작위각식기체시,Ar류량재흔대범위내대각식속솔몰용명현영향,단 Ar 적류량월대,각식적균균성월호;용 Cl2/Ar 작위각식기체시,각식속솔야시100 nm/min,단 Ar 류량대각식속솔유영향:당 Ar 류량소우3 sccm 시,각식속솔수 Ar 류량적감소이명현강저.
ICP (Inductively Couple Plasma) etching in InAs/GaSb type II superlattice infrared detector material with Cl2/Ar and SiCl4/Ar were studied. The results show that the etching depth is linear with etching time for both etching gases. The etching rate is 100 nm/min at a set of conditions: RF power of 50 W, SiCl4 flow for 3 sccm, Ar to 9 sccm, the standard operating pressure is 2 mTorr. The etching rate did not depend on the doping concentration. The Ar flow fluctuation has no significant effect on etching rate when using SiCl4/Ar as the etch gases. But this condition exists in Cl2/Ar, especially when the flow of Ar under 3 sccm, and the etching rate droped with the reduction of Ar flow.