CAJ | 학술논문

本文用Gill数值求解方法模拟了HL‐2A装置在中性束加热条件下,电子、离子温度随时间的演化过程,模拟结果与实验结果有较好的一致性.我们对不同中性束注入条件下的电子、离子温度演化也进行了模拟,并分析了电子、离子温度的爬升速度的影响因素.
본문용Gill수치구해방법모의료HL‐2A장치재중성속가열조건하,전자、리자온도수시간적연화과정,모의결과여실험결과유교호적일치성.아문대불동중성속주입조건하적전자、리자온도연화야진행료모의,병분석료전자、리자온도적파승속도적영향인소.
In this paper ,the Gill numerical simulation method has been applied for the simulation of electron and ion temperature evolution process under the situation of neutral beam injection in the HL‐2A device ,the results are in good agreement with experiments .Electron and ion temperature evolution process in different condi‐tions are also simulated ,and the influence factors to climbing speed of electron and ion temperature are analysed .