电子与封装
電子與封裝
전자여봉장
EIECTRONICS AND PACKAGING
2013年
3期
36-38
,共3页
SOI%高压NMOS%工艺
SOI%高壓NMOS%工藝
SOI%고압NMOS%공예
SOI%high voltage NMOS%process
由于PD SOI工艺平台的特殊性,P阱浓度呈现表面低、靠近埋氧高的梯度掺杂.常规体硅的高压N管结构是整个有源区在P阱里的,需要用高能量和大剂量的P注入工艺将漂移区的P阱反型掺杂,这在工艺上是不容易实现的.文章针对常规高压NMOS器件做了仿真,发现漂移区必须采用能量高达180 KeV、剂量6×1013以上的P注入才能将P阱反型,形成高压NMOS器件,这在工艺实现上不太容易.而采用漂移区在N阱里的新结构,可以避免将P阱上漂移区反型的注入工艺,在工艺上容易实现.通过工艺流片验证,器件特性良好.
由于PD SOI工藝平檯的特殊性,P阱濃度呈現錶麵低、靠近埋氧高的梯度摻雜.常規體硅的高壓N管結構是整箇有源區在P阱裏的,需要用高能量和大劑量的P註入工藝將漂移區的P阱反型摻雜,這在工藝上是不容易實現的.文章針對常規高壓NMOS器件做瞭倣真,髮現漂移區必鬚採用能量高達180 KeV、劑量6×1013以上的P註入纔能將P阱反型,形成高壓NMOS器件,這在工藝實現上不太容易.而採用漂移區在N阱裏的新結構,可以避免將P阱上漂移區反型的註入工藝,在工藝上容易實現.通過工藝流片驗證,器件特性良好.
유우PD SOI공예평태적특수성,P정농도정현표면저、고근매양고적제도참잡.상규체규적고압N관결구시정개유원구재P정리적,수요용고능량화대제량적P주입공예장표이구적P정반형참잡,저재공예상시불용역실현적.문장침대상규고압NMOS기건주료방진,발현표이구필수채용능량고체180 KeV、제량6×1013이상적P주입재능장P정반형,형성고압NMOS기건,저재공예실현상불태용역.이채용표이구재N정리적신결구,가이피면장P정상표이구반형적주입공예,재공예상용역실현.통과공예류편험증,기건특성량호.
@@@@Because of particularity of PD SOI process, the concentration of P well appears a gradually increase from surface to BOX. In a normal high voltage NMOS device, an implant process of P element with great energy and dose must be needed, it is difficult to realize. A simulation of normal high voltage NMOS device has been accomplished based on PD SOI process. In order to invert the drift region in P well and form NMOS device, P should implanted with high energy(above 180 KeV)and high dose (above 6×1013). This is not an easy way in process. But it is much easier to adopt a new structure, that the drift region is in N well. Verified by manufacturing, the character of the new structure device is good.
