物理化学学报
物理化學學報
물이화학학보
ACTA PHYSICO-CHIMICA SINICA
2013年
1期
73-81
,共9页
高瑞%牛广达%王立铎*%马蓓蓓%邱勇
高瑞%牛廣達%王立鐸*%馬蓓蓓%邱勇
고서%우엄체%왕립탁*%마배배%구용
交替组装结构%光响应范围%电荷复合%电子过程
交替組裝結構%光響應範圍%電荷複閤%電子過程
교체조장결구%광향응범위%전하복합%전자과정
Alternating assembly structure%Photoresponse range%Charge recombination%Electron process
研究了染料敏化太阳能电池(DSCs)中N3/Al2O3/N749交替组装结构的作用.该结构使用Al2O3作为介质层吸附第二层染料,可以有效拓宽DSCs的光响应范围,提高电池的光电转化效率. UV-Vis吸收光谱和单色光转换效率(IPCE)谱测试结果表明,相对于单一染料,使用交替组装结构的电池光响应范围变宽.电流-电压(I-V)曲线结果表明,该结构有效增加了DSCs电池的光电转化效率,从单一N3和N749染料的4.22%和3.09%增加到了5.75%,分别增加了36%和86%.为了研究该结构的作用机理,本文对其界面修饰作用及界面电子过程进行了讨论.暗电流测试结果表明交替组装结构可以有效阻止电荷复合过程;电化学阻抗谱(EIS)结果表明在黑暗条件下, N3/Al2O3/N749结构可以提高界面电阻,从而抑制电荷复合过程;本文建立了等效电路模型,并使用该模型讨论了交替组装结构的界面电子过程;调制强度光电流谱(IMPS)和调制强度光电压谱(IMVS)的结果表明该结构可以提高电子寿命和改善电子扩散.
研究瞭染料敏化太暘能電池(DSCs)中N3/Al2O3/N749交替組裝結構的作用.該結構使用Al2O3作為介質層吸附第二層染料,可以有效拓寬DSCs的光響應範圍,提高電池的光電轉化效率. UV-Vis吸收光譜和單色光轉換效率(IPCE)譜測試結果錶明,相對于單一染料,使用交替組裝結構的電池光響應範圍變寬.電流-電壓(I-V)麯線結果錶明,該結構有效增加瞭DSCs電池的光電轉化效率,從單一N3和N749染料的4.22%和3.09%增加到瞭5.75%,分彆增加瞭36%和86%.為瞭研究該結構的作用機理,本文對其界麵脩飾作用及界麵電子過程進行瞭討論.暗電流測試結果錶明交替組裝結構可以有效阻止電荷複閤過程;電化學阻抗譜(EIS)結果錶明在黑暗條件下, N3/Al2O3/N749結構可以提高界麵電阻,從而抑製電荷複閤過程;本文建立瞭等效電路模型,併使用該模型討論瞭交替組裝結構的界麵電子過程;調製彊度光電流譜(IMPS)和調製彊度光電壓譜(IMVS)的結果錶明該結構可以提高電子壽命和改善電子擴散.
연구료염료민화태양능전지(DSCs)중N3/Al2O3/N749교체조장결구적작용.해결구사용Al2O3작위개질층흡부제이층염료,가이유효탁관DSCs적광향응범위,제고전지적광전전화효솔. UV-Vis흡수광보화단색광전환효솔(IPCE)보측시결과표명,상대우단일염료,사용교체조장결구적전지광향응범위변관.전류-전압(I-V)곡선결과표명,해결구유효증가료DSCs전지적광전전화효솔,종단일N3화N749염료적4.22%화3.09%증가도료5.75%,분별증가료36%화86%.위료연구해결구적작용궤리,본문대기계면수식작용급계면전자과정진행료토론.암전류측시결과표명교체조장결구가이유효조지전하복합과정;전화학조항보(EIS)결과표명재흑암조건하, N3/Al2O3/N749결구가이제고계면전조,종이억제전하복합과정;본문건립료등효전로모형,병사용해모형토론료교체조장결구적계면전자과정;조제강도광전류보(IMPS)화조제강도광전압보(IMVS)적결과표명해결구가이제고전자수명화개선전자확산.
In this paper, the interface modification effects and electron processes in N3/Al2O3/N749 alternating structured dye-sensitized solar cel s (DSCs) were studied. UV-Vis absorption and monochromatic incident photon-to-electron conversion efficiency (IPCE) spectra showed that the N3/Al2O3/N749 structure broadened the photo-response range. Photocurrent-voltage (I-V) curves showed that enhanced conversion efficiencies were obtained. Compared with N3- and N749-only structures, the efficiency of the N3/Al2O3/N749 structure increased from 4.22% and 3.09% to 5.75% (36% and 86%enhancement), respectively. From electrochemical impedance spectroscopy (EIS) results, the N3/Al2O3/N749 structure displayed increased interface resistance under dark conditions. This indicates that charge recombination is reduced in the N3/Al2O3/N749 device, which was confirmed from the dark current measurements. Furthermore, to analyze the electron processes, a series of equivalent circuit models were built to mimic the injection and recombination process in DSCs. Intensity modulated photocurrent spectroscopy (IMPS) and intensity modulated photovoltage spectroscopy (IMVS) also showed that this structure improved the electron life time and diffusion.
