CAJ | 학술논문

以3-巯基丙酸为稳定剂在水相中合成了Cu掺杂的ZnSe量子点(QDs),并利用硫脲(CH4N2S)对其进行表面修饰,制备出核壳结构的ZnSe:Cu/ZnS量子点.制得的量子点呈闪锌矿结构,尺寸约为5 nm,有较好的分散性,其荧光发射峰在460 nm左右.经CH4N2S修饰后,量子点表面形成了宽禁带的ZnS包覆层,将电子和空穴限域在了ZnSe:Cu核内,减少了表面发生非辐射复合的载流子,显著提高了量子点的荧光强度.与Na2S、硫代乙酰胺(TAA)等常用硫源相比,以CH4N2S为硫源制得的ZnSe:Cu/ZnS量子点壳层厚度可控,表面钝化效果更好,显示出更佳的荧光效率和稳定性. ZnSe:Cu/ZnS量子点经过紫外线照射后消除了表面的悬空键,进一步提高了其量子产率,最终获到了具有较好荧光性质的ZnSe:Cu/ZnS量子点.
이3-구기병산위은정제재수상중합성료Cu참잡적ZnSe양자점(QDs),병이용류뇨(CH4N2S)대기진행표면수식,제비출핵각결구적ZnSe:Cu/ZnS양자점.제득적양자점정섬자광결구,척촌약위5 nm,유교호적분산성,기형광발사봉재460 nm좌우.경CH4N2S수식후,양자점표면형성료관금대적ZnS포복층,장전자화공혈한역재료ZnSe:Cu핵내,감소료표면발생비복사복합적재류자,현저제고료양자점적형광강도.여Na2S、류대을선알(TAA)등상용류원상비,이CH4N2S위류원제득적ZnSe:Cu/ZnS양자점각층후도가공,표면둔화효과경호,현시출경가적형광효솔화은정성. ZnSe:Cu/ZnS양자점경과자외선조사후소제료표면적현공건,진일보제고료기양자산솔,최종획도료구유교호형광성질적ZnSe:Cu/ZnS양자점.
Aqueous phase Cu doped ZnSe (ZnSe:Cu) quantum dots (QDs) stabilized with mercaptopropionic acid were prepared, and thiourea was used as a surface modifier to obtain core-shel ZnSe:Cu/ZnS QDs. QDs had a sphalerite structure, were uniformly dispersed, had an average particle size of approximately 5 nm and an emission peak at around 460 nm. After thiourea modification, a wide band-gap ZnS shel was coated on the QDs to passivate the surface, reduce surface states, and significantly improve fluorescence intensity. Thiourea modified ZnSe:Cu/ZnS QDs exhibit better surface passivation, fluorescence efficiency, and stability than those of other surface modifiers like Na2S and thioacetamide. Quantum yields were further improved after UV irradiation eliminated surface dangling bonds.