CAJ | 학술논문

众所周知,双极型晶体管的设计主要是基区的设计.一般而言,基区的杂质分布是非均匀的.本文首先研究了非均匀的杂质高斯分布对器件温度分布、增益和截止频率的温度特性的影响,发现增益和截止频率具有正温度系数,体内温度较高.随后研究了基区Ge组分分布对这些器件参数的影响.均匀Ge组分分布和梯形Ge组分分布的SiGe异质结双极型晶体管增益和截止频率具有负温度系数,具有较好的体内温度分布.进一步的研究表明,具有梯形Ge组分分布的SiGe异质结双极型晶体管,由于Ge组分缓变引入了少子加速电场,不但使它的增益和截止频率具有较高的值,而且保持了较弱的温度敏感性,在增益、特征频率大小及其温度敏感性、体内温度分布达到了很好的折中.
음소주지,쌍겁형정체관적설계주요시기구적설계.일반이언,기구적잡질분포시비균균적.본문수선연구료비균균적잡질고사분포대기건온도분포、증익화절지빈솔적온도특성적영향,발현증익화절지빈솔구유정온도계수,체내온도교고.수후연구료기구Ge조분분포대저사기건삼수적영향.균균Ge조분분포화제형Ge조분분포적SiGe이질결쌍겁형정체관증익화절지빈솔구유부온도계수,구유교호적체내온도분포.진일보적연구표명,구유제형Ge조분분포적SiGe이질결쌍겁형정체관,유우Ge조분완변인입료소자가속전장,불단사타적증익화절지빈솔구유교고적치,이차보지료교약적온도민감성,재증익、특정빈솔대소급기온도민감성、체내온도분포체도료흔호적절중.
As is well known, base region is the design focus of bipolar junction transistor (BJT). Generally, the doping distribution in base is non-uniform. In this paper, the effects of different Gaussian dopings in the base on bulk temperature distribution, temperature dependences of current gain and cut-off frequency are first studied. It is found that current gain and cut-off frequency of BJT have positive temperature coefficients, and the temperature in bulk is high. Then, the effect of Ge composition distribution on these device parameters is investigated. It is found that the SiGe heterojunction bipolar transistors (HBTs) with box Ge composition distribution and trapezoidal Ge composition distribution have negative temperature coefficients of current gain and cut-off frequency, and have good bulk temperature distributions. Furthermore, the SiGe HBT with trapezoidal Ge profile has higher current gain and cut-off frequency, and its temperature insensitivity is kept. The good trade-off is made among the magnitudes of current gain and cut-off frequency, temperature sensitivity and bulk temperature distribution.