CAJ | 학술논문

采用反应溅射法,分别制备以LaTiON, HfLaON为存储层的金属-氧化物-氮化物-氧化物-硅电容存储器,研究了淀积后退火气氛(N2, NH3)对其存储性能的影响.分析测试表明,退火前LaTiON样品比HfLaON样品具有更好的电荷保持特性,但后者具有更大的存储窗口(编程/擦除电压为+/?12 V时4.8 V);对于退火样品,由于NH3的氮化作用, NH3退火样品比N2退火样品表现出更快的编程/擦除速度、更好的电荷保持特性和疲劳特性.当编程/擦除电压为+/?12 V时, NH3退火HfLaON样品的存储窗口为3.8 V,且比NH3退火LaTiON样品具有更好的电荷保持特性和疲劳特性.
채용반응천사법,분별제비이LaTiON, HfLaON위존저층적금속-양화물-담화물-양화물-규전용존저기,연구료정적후퇴화기분(N2, NH3)대기존저성능적영향.분석측시표명,퇴화전LaTiON양품비HfLaON양품구유경호적전하보지특성,단후자구유경대적존저창구(편정/찰제전압위+/?12 V시4.8 V);대우퇴화양품,유우NH3적담화작용, NH3퇴화양품비N2퇴화양품표현출경쾌적편정/찰제속도、경호적전하보지특성화피로특성.당편정/찰제전압위+/?12 V시, NH3퇴화HfLaON양품적존저창구위3.8 V,차비NH3퇴화LaTiON양품구유경호적전하보지특성화피로특성.
Charge-trapping memory capacitor with LaTiON or HfLaON serving as charge storage layer is fabricated by reactive sputtering method, and influences of post-deposition annealing (PDA) in NH3 or N2 ambient on its memory characteristics are investigated. It is found that before PDA, the LaTiON sample exhibits better retention characteristic than the HfLaON sample, but the later shows larger memory window (4.8 V at+/?12 V/1 s), and after PDA, the NH3-annealed sample has faster program/erase speed, better retention and endurance properties than the N2-annealed sample, owing to nitridation role of NH3. Furthermore, the HfLaON sample with PDA in NH3achieves a large memory window of 3.8 V at+/?12 V/1 s, and also shows better retention and endurance properties than the LaTiON sample with PDA in NH3.