CAJ | 학술논문

采用射频反应溅射法于室温下在Cu/Ti/SiO2/Si基底上制备了氧化钒薄膜. X-射线衍射、X射线光电子能谱分析仪及原子力显微镜结果表明,室温下制备的氧化钒薄膜除微弱的V2O5(101)和V2O3(110)峰外,没有明显的结晶取向,是VO2, V2O5, V2O3及VO的混合相薄膜,且薄膜表面颗粒大小均匀,表面均方根粗糙度约为1 nm.采用半导体参数分析仪对薄膜的电开关特性进行测试.结果表明薄膜具有较低的开关电压(VSet<1 V, VReset<?0.5 V),并且具有稳定的可逆开关特性.薄膜从低阻态转变为高阻态的电流(IReset)随限流的增大而增大.通过高低阻态时I-V 对数曲线的拟合(高阻态斜率>1,低阻态斜率=1),认为Cu离子在薄膜中扩散形成的导电细丝是该体系发生电阻转变的主要机制.
채용사빈반응천사법우실온하재Cu/Ti/SiO2/Si기저상제비료양화범박막. X-사선연사、X사선광전자능보분석의급원자력현미경결과표명,실온하제비적양화범박막제미약적V2O5(101)화V2O3(110)봉외,몰유명현적결정취향,시VO2, V2O5, V2O3급VO적혼합상박막,차박막표면과립대소균균,표면균방근조조도약위1 nm.채용반도체삼수분석의대박막적전개관특성진행측시.결과표명박막구유교저적개관전압(VSet<1 V, VReset<?0.5 V),병차구유은정적가역개관특성.박막종저조태전변위고조태적전류(IReset)수한류적증대이증대.통과고저조태시I-V 대수곡선적의합(고조태사솔>1,저조태사솔=1),인위Cu리자재박막중확산형성적도전세사시해체계발생전조전변적주요궤제.
Vanadium oxide thin films are deposited on Cu/Ti/SiO2/Si by reactive sputtering at room temperature. The crystal structure, component and surface morphology of VOx film are characterized by X ray diffraction, X-ray photoelectron spectroscopy and atomic force microscopy, respectively. These investigations reveal that there is no obvious crystal orientation except weak V2O5 (101) and V2O3 (110) peaks, and the film contains VO2, V2O5, V2O3 and VO mixture phase. The surface particle size of the film is uniform with a root mean square roughness of 1 nm. The resistive switching properties of VOx thin film are tested by semiconductor device analyzer (Agilent B1500A). The I-V characteristics of the VOx memory cell reveal that the cell has low switch voltage (VSet<1 V, VReset<0.5 V) and the stable reversible switching characteristic. The current of the film changing from low resistance state to high resistance state (IReset) increases with current compliance increasing. The double-logarithmic plots of the I-V curve for the high and low resistance state show high configuration slope>1 and low resistance state slope=1. It is confirmed that the copper ion diffusion and the formation of conduction filaments may be the resistance switching mechanism of the VOx/Cu structure.