物理学报
物理學報
물이학보
2013年
4期
417-423
,共7页
刘义*%张清%李海金%李勇%刘厚通
劉義*%張清%李海金%李勇%劉厚通
류의*%장청%리해금%리용%류후통
热电材料%溶胶-凝胶%YCoO3
熱電材料%溶膠-凝膠%YCoO3
열전재료%용효-응효%YCoO3
thermoelectric materials%sol-gel%YCoO3
采用溶胶-凝胶方法成功制备了Sr的替代化合物Y1?xSrxCoO3(x=0,0.01,0.05,0.10,0.15,0.20),系统地研究了20—720 K温度范围内Y1?xSrxCoO3的电阻率温度关系.研究表明,随着Sr的替代含量的增加, Y1?xSrxCoO3的电阻率迅速地降低,这主要是由于载流子浓度的增加引起.样品x=0和0.01在低于330和260 K的温度范围内,电阻率与温度之间满足指数关系lnρ∝1/T,获得导电激活能分别为0.2950和0.1461 eV.然而,实验显示lnρ∝1/T 关系仅成立于重掺杂样品的高温区;在低温区莫特定律lnρ∝T?1/4成立,且表明重掺杂引入势垒,导致大量局域态的形成.根据莫特T?1/4定律拟合实验数据,评估了局域态密度N(EF),它随着掺杂量的增加而增加.
採用溶膠-凝膠方法成功製備瞭Sr的替代化閤物Y1?xSrxCoO3(x=0,0.01,0.05,0.10,0.15,0.20),繫統地研究瞭20—720 K溫度範圍內Y1?xSrxCoO3的電阻率溫度關繫.研究錶明,隨著Sr的替代含量的增加, Y1?xSrxCoO3的電阻率迅速地降低,這主要是由于載流子濃度的增加引起.樣品x=0和0.01在低于330和260 K的溫度範圍內,電阻率與溫度之間滿足指數關繫lnρ∝1/T,穫得導電激活能分彆為0.2950和0.1461 eV.然而,實驗顯示lnρ∝1/T 關繫僅成立于重摻雜樣品的高溫區;在低溫區莫特定律lnρ∝T?1/4成立,且錶明重摻雜引入勢壘,導緻大量跼域態的形成.根據莫特T?1/4定律擬閤實驗數據,評估瞭跼域態密度N(EF),它隨著摻雜量的增加而增加.
채용용효-응효방법성공제비료Sr적체대화합물Y1?xSrxCoO3(x=0,0.01,0.05,0.10,0.15,0.20),계통지연구료20—720 K온도범위내Y1?xSrxCoO3적전조솔온도관계.연구표명,수착Sr적체대함량적증가, Y1?xSrxCoO3적전조솔신속지강저,저주요시유우재류자농도적증가인기.양품x=0화0.01재저우330화260 K적온도범위내,전조솔여온도지간만족지수관계lnρ∝1/T,획득도전격활능분별위0.2950화0.1461 eV.연이,실험현시lnρ∝1/T 관계부성립우중참잡양품적고온구;재저온구막특정률lnρ∝T?1/4성립,차표명중참잡인입세루,도치대량국역태적형성.근거막특T?1/4정률의합실험수거,평고료국역태밀도N(EF),타수착참잡량적증가이증가.
The temperature dependences of electrical resistivity for Sr-substituted compounds Y1?xSrxCoO3 (x=0, 0.01, 0.05, 0.10, 0.15, 0.20), prepared successfully by sol-gel process, are investigated in a temperature range from 20 to 720 K. The results indicate that with the increase of doping content of Sr the resistivity of Y1?xSrxCoO3 decreases remarkably, which is found to be caused by the increase of carrier concentration. In a temperature range below 330 and 260 K for the sample x=0 and 0.01, the relationship of resistivity versus temperature processes exponential relationship lnρ ∝1/T, with conduction activation energy 0.2950 and 0.1461 eV for the sample x=0 and 0.01 respectively. Moreover, experiments show that the relationship lnρ ∝1/T exists only in high-temperature regime for the heavily doped samples;at low temperatures Mott’s law lnρ∝T?1/4 is observed, indicating that heavy doping produces strong potential, which leads to the formation of considerable localized state. By fitting the experimental data to Mott’s T?1/4 law, the density of localized states N(EF) at Fermi level is estimated, which is found to increase with doping content increasing.