CAJ | 학술논문

针对国产锗硅异质结双极晶体管(SiGe HBTs),采用半导体器件模拟工具,建立SiGe HBT单粒子效应三维损伤模型,研究影响SiGe HBT单粒子效应电荷收集的关键因素.分析比较重离子在不同位置入射器件时,各电极的电流变化和感生电荷收集情况,确定SiGe HBT电荷收集的敏感区域.结果表明,集电极/衬底结内及附近区域为集电极和衬底收集电荷的敏感区域,浅槽隔离内的区域为基极收集电荷的敏感区域,发射极收集的电荷可以忽略.此项工作的开展为下一步采用设计加固的方法提高器件的抗辐射性能打下了良好的基础.
침대국산타규이질결쌍겁정체관(SiGe HBTs),채용반도체기건모의공구,건립SiGe HBT단입자효응삼유손상모형,연구영향SiGe HBT단입자효응전하수집적관건인소.분석비교중리자재불동위치입사기건시,각전겁적전류변화화감생전하수집정황,학정SiGe HBT전하수집적민감구역.결과표명,집전겁/츤저결내급부근구역위집전겁화츤저수집전하적민감구역,천조격리내적구역위기겁수집전하적민감구역,발사겁수집적전하가이홀략.차항공작적개전위하일보채용설계가고적방법제고기건적항복사성능타하료량호적기출.
In this paper, we establish a three-dimensional numerical simulation model for SiGe heterojunction bipolar transistor by the technology computer aided design simulations. In the simulation we investigate the charge collection mechanism by heavy ion radiation in SiGe HBT technology. The results show that the charge collected by the terminals is a strong function of the ion striking position. The sensitive area of charge collection for each terminal is identified based on the analyses of the device structure and simulation results. For a normal strike within and around the area of the collector/substrate junction, most of the electrons and holes are collected by the collector and substrate terminals, respectively. For an ion strike between the shallow trench edges surrounding the emitter, the base collects a large quantity of charge, while the emitter collects a negligible quantity of charge.